Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

doi:10.1088/1674-1056/23/4/048108

Abstract The VO₂ thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO₂ film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO₂ film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO₂ film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-℃ hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.

Keywords: rapid thermal process VO₂ thin film phase transition modification

Received: 04 September 2013
Revised: 24 October 2013
Accepted manuscript online:

PACS:	81.40.Gh	(Other heat and thermomechanical treatments)
	81.05.Hd	(Other semiconductors)
	81.40.Rs	(Electrical and magnetic properties related to treatment conditions)
	81.40.Tv	(Optical and dielectric properties related to treatment conditions)

Fund: Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 61101055) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20100032120029).

Corresponding Authors: Hu Ming
E-mail: huming@tju.edu.cn

About author: 81.40.Gh; 81.05.Hd; 81.40.Rs; 81.40.Tv

Cite this article:

Zhu Nai-Wei (朱乃伟), Hu Ming (胡明), Xia Xiao-Xu (夏晓旭), Wei Xiao-Ying (韦晓莹), Liang Ji-Ran (梁继然) Preparation and modification of VO₂ thin film on R-sapphire substrate by rapid thermal process 2014 Chin. Phys. B 23 048108

[1]	Morin F J 1959 Phys. Rev. Lett. 3 34
[2]	Ruzmetov D, Senanayake S D, Narayanamurti V and Ramanathan S 2008 Phys. Rev. B 77 195442
[3]	Ma J W, Xu G, Miao L, Tazawa M and Tanemura S 2011 Jpn. J. Appl. Phys 50 020215
[4]	Bialas H, Dillenz A, Downar H and Ziemann P 1999 Thin Solid Films 338 60
[5]	Pashkin A, Kubler C, Ehrke H, Lopez R, Halabica A, Haglund R F Jr, Huber R and Leitenstorfer A 2011 Phys. Rev. B 83 195120
[6]	Wang X J, Liu Y Y, Li D H, Feng B H, He Z W and Qi Z 2013 Chin. Phys. B 22 066803
[7]	Kyoung J S, Choi S B, Kim H S, Ahn Y H, Kim H T and KiM D S 2011 AIP Adv. 1399 1027
[8]	Soltani M, Chaker M, Haddad E and Kruzelesky R 2006 Meas. Sci. Technol. 17 1052
[9]	Wei X Y, Hu M, Zhang K L, Wang F and Liu K 2013 Acta Phys. Sin. 62 047201 (in Chinese)
[10]	Qiu D H, Wen Q Y, Yang Q H, Chen Z, Jing Y L and Zhang H W 2013 Acta Phys. Sin. 62 217201 (in Chinese)
[11]	Lee J S, Ortolani M and Schade U 2007 Appl. Phys. Lett. 91 133509
[12]	Zhang K L, Liu K, Wang F, Yi F H, Wei X Y and Zhao J S 2013 Chin. Phys. B 22 217201
[13]	Batista C, Ribeiro R, Carneiro J and Teixeira V 2009 J. Nanosci. Nanotechnol. 9 4220
[14]	Wang B, Lai J J, Zhao E J, Hu H M, Liu Q and Chen S H 2012 Opt. Eng. 51 074003
[15]	Wang Y Q, Zhang Z J, Zhu Y, Li Z C, Vajtai R, Ci L J and Ajayan P M 2008 ACS Nano 2 1492
[16]	Nag J, Payzant E A, More K L and Haglund R F 2011 Appl. Phys. Lett. 98 2519161
[17]	Ruzmetov D, Zawilski K T, Narayanamurti V and Ramanathan S 2007 Appl. Phys. Lett. 102 113715
[18]	Chen C and Fan Z Y 2009 Appl. Phys. Lett. 95 262106
[19]	Nagashima K, Yanagida T, Tanaka H and Kawai T 2007 Appl. Phys. Lett. 101 026103
[20]	Wu Z P, Yamamoto S, Miyasita A, Zhang Z J, Narumi K and Naramoto H 1998 Journal of Physics 10 765
[21]	Al-Kuhaili M F, Khawaja E E, Ingram D C and Durrani S M A 2004 Thin Solid Films 460 30
[22]	Huang Z L, Chen S H, Chen Y, Huang Y, Fu W and Lai J J 2012 Surf. & Coat. Technol. 207 130
[23]	Wang T, Jiang Y D, Yu H, Wu Z M and Zhao H N Chin. Phys. B 22 038101
[24]	Wang X J, Liang C J, Guan K P, Li D H, Nie Y X, Zhu S Q, Huang F, Zhang W W and Cheng Z W 2008 Chin. Phys. B 17 3512
[25]	Nakajima M, Takubo N, Hiroi Z, Ueda Y and Suemoto T 2008 Appl. Phys. Lett. 92 011907
[26]	Yuan N Y, Li J H and Lin C L 2002 Acta Phys. Sin. 51 085205 (in Chinese)
[27]	He Qiong, Xu X D, Wen E J, Jiang Y D, Ao T H, Fan T J, Huang L, Ma C Q and Sun Z Q 2013 Acta Phys. Sin. 62 056082 (in Chinese)
[28]	Wu B, Hu M, Hou S B, Lü Z H, Gao W and Liang J R 2012 Acta Phys. Sin. 61 188101 (in Chinese)
[29]	Gao W, Hu M, Hou S B, Lü Z H and Wu B 2013 Acta Phys. Sin. 62 018104 (in Chinese)
[30]	He L, Li Z C and Zhang Z J 2008 Nanotechnology 19 155606
[31]	Zhang H, Liu Y S, Liu W H, Wang B Y and Wei L 2007 Acta Phys. Sin. 56 7255 (in Chinese)
[32]	Alov N, Kutsko D, Spirovova I and Bastl Z 2006 Surf. Sci. 600 1628
[33]	Brassard D, Fourmaux S, Jean-Jacques M, Kieffer J C and El Khakani M A 2005 Appl. Phys. Lett. 87 051910
[34]	Chae B G, Kim H T, Yun S J, Kim B J, Lee Y W, Youn D H and Kang K Y 2006 Electrochem. Solid State Lett. 9 12
[35]	Jepsen P U, Fischer B M, Thoman A, Helm H, Suh J Y, Lopez R and Haglund R F 2006 Phys. Rev. B 74 205103

[1]	Tailoring of thermal expansion and phase transition temperature of ZrW₂O₈ with phosphorus and enhancement of negative thermal expansion of ZrW_1.5P_0.5O_7.75 Chenjun Zhang(张晨骏), Xiaoke He(何小可), Zhiyu Min(闵志宇), and Baozhong Li(李保忠). Chin. Phys. B, 2023, 32(4): 048201.
[2]	Topological phase transition in network spreading Fuzhong Nian(年福忠) and Xia Zhang(张霞). Chin. Phys. B, 2023, 32(3): 038901.
[3]	Liquid-liquid phase transition in confined liquid titanium Di Zhang(张迪), Yunrui Duan(段云瑞), Peiru Zheng(郑培儒), Yingjie Ma(马英杰), Junping Qian(钱俊平), Zhichao Li(李志超), Jian Huang(黄建), Yanyan Jiang(蒋妍彦), and Hui Li(李辉). Chin. Phys. B, 2023, 32(2): 026801.
[4]	Magnetocaloric properties and Griffiths phase of ferrimagnetic cobaltite CaBaCo₄O₇ Tina Raoufi, Jincheng He(何金城), Binbin Wang(王彬彬), Enke Liu(刘恩克), and Young Sun(孙阳). Chin. Phys. B, 2023, 32(1): 017504.
[5]	Prediction of flexoelectricity in BaTiO₃ using molecular dynamics simulations Long Zhou(周龙), Xu-Long Zhang(张旭龙), Yu-Ying Cao(曹玉莹), Fu Zheng(郑富), Hua Gao(高华), Hong-Fei Liu(刘红飞), and Zhi Ma(马治). Chin. Phys. B, 2023, 32(1): 017701.
[6]	Configurational entropy-induced phase transition in spinel LiMn₂O₄ Wei Hu(胡伟), Wen-Wei Luo(罗文崴), Mu-Sheng Wu(吴木生), Bo Xu(徐波), and Chu-Ying Ouyang(欧阳楚英). Chin. Phys. B, 2022, 31(9): 098202.
[7]	Hard-core Hall tube in superconducting circuits Xin Guan(关欣), Gang Chen(陈刚), Jing Pan(潘婧), and Zhi-Guo Gui(桂志国). Chin. Phys. B, 2022, 31(8): 080302.
[8]	Exchange-coupling-induced fourfold magnetic anisotropy in CoFeB/FeRh bilayer grown on SrTiO₃(001) Qingrong Shao(邵倾蓉), Jing Meng(孟婧), Xiaoyan Zhu(朱晓艳), Yali Xie(谢亚丽), Wenjuan Cheng(程文娟), Dongmei Jiang(蒋冬梅), Yang Xu(徐杨), Tian Shang(商恬), and Qingfeng Zhan(詹清峰). Chin. Phys. B, 2022, 31(8): 087503.
[9]	Effect of f-c hybridization on the $\gamma\to \alpha$ phase transition of cerium studied by lanthanum doping Yong-Huan Wang(王永欢), Yun Zhang(张云), Yu Liu(刘瑜), Xiao Tan(谈笑), Ce Ma(马策), Yue-Chao Wang(王越超), Qiang Zhang(张强), Deng-Peng Yuan(袁登鹏), Dan Jian(简单), Jian Wu(吴健), Chao Lai(赖超), Xi-Yang Wang(王西洋), Xue-Bing Luo(罗学兵), Qiu-Yun Chen(陈秋云), Wei Feng(冯卫), Qin Liu(刘琴), Qun-Qing Hao(郝群庆), Yi Liu(刘毅), Shi-Yong Tan(谭世勇), Xie-Gang Zhu(朱燮刚), Hai-Feng Song(宋海峰), and Xin-Chun Lai(赖新春). Chin. Phys. B, 2022, 31(8): 087102.
[10]	Characterization of topological phase of superlattices in superconducting circuits Jianfei Chen(陈健菲), Chaohua Wu(吴超华), Jingtao Fan(樊景涛), and Gang Chen(陈刚). Chin. Phys. B, 2022, 31(8): 088501.
[11]	Structural evolution and molecular dissociation of H₂S under high pressures Wen-Ji Shen(沈文吉), Tian-Xiao Liang(梁天笑), Zhao Liu(刘召), Xin Wang(王鑫), De-Fang Duan(段德芳), Hong-Yu Yu(于洪雨), and Tian Cui(崔田). Chin. Phys. B, 2022, 31(7): 076102.
[12]	Probing the improved stability for high nickel cathode via dual-element modification in lithium-ion Fengling Chen(陈峰岭), Chaozhi Zeng(曾朝智), Chun Huang(黄淳), Jiannan Lin(林建楠), Yifan Chen(陈一帆), Binbin Dong(董彬彬), Chujun Yin(尹楚君), Siying Tian(田飔莹), Dapeng Sun(孙大鹏), Zhenyu Zhang(张振宇), Hong Li(李泓), and Chaobo Li(李超波). Chin. Phys. B, 2022, 31(7): 078101.
[13]	Structural evolution and bandgap modulation of layered β-GeSe₂ single crystal under high pressure Hengli Xie(谢恒立), Jiaxiang Wang(王家祥), Lingrui Wang(王玲瑞), Yong Yan(闫勇), Juan Guo(郭娟), Qilong Gao(高其龙), Mingju Chao(晁明举), Erjun Liang(梁二军), and Xiao Ren(任霄). Chin. Phys. B, 2022, 31(7): 076101.
[14]	Universal order-parameter and quantum phase transition for two-dimensional q-state quantum Potts model Yan-Wei Dai(代艳伟), Sheng-Hao Li(李生好), and Xi-Hao Chen(陈西浩). Chin. Phys. B, 2022, 31(7): 070502.
[15]	Topological phase transition in cavity optomechanical system with periodical modulation Zhi-Xu Zhang(张志旭), Lu Qi(祁鲁), Wen-Xue Cui(崔文学), Shou Zhang(张寿), and Hong-Fu Wang(王洪福). Chin. Phys. B, 2022, 31(7): 070301.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process

Cite this article:

Online attention

Preparation and modification of VO₂ thin film on R-sapphire substrate by rapid thermal process