SPICE modeling of flux-controlled unipolar memristive devices

doi:10.1088/1674-1056/22/7/078901

Abstract Unipolar memristive devices are an important kind of resistive switching devices. However, few circuit models of them have been proposed. In this paper, we propose the SPICE modeling of flux-controlled unipolar memristive devices based on the memristance versus state map. Using our model, the flux thresholds, ON and OFF resistance, compliance current can easily be set as model parameters. We simulate the model in HSPICE using model parameters abstracted from real devices, and the simulation results show that our model caters to the real device data very well, thus demonstrating that our model is correct. Using the same modeling methodology, the SPICE model of charge-controlled unipolar memristive devices could also be developed. The proposed model could be used to model resistive memory cells, logical gates as well as synapses in artificial neural networks.

Keywords: unipolar memristive devices memristive SPICE model

Received: 29 December 2012
Revised: 28 January 2013
Accepted manuscript online:

PACS:	89.20.Ff	(Computer science and technology)
	85.40.Bh	(Computer-aided design of microcircuits; layout and modeling)
	85.35.-p	(Nanoelectronic devices)
	84.32.-y	(Passive circuit components)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 60921062, 61003082, and 61272146).

Corresponding Authors: Fang Xu-Dong
E-mail: fangxudong850403@gmail.com

Cite this article:

Fang Xu-Dong (方旭东), Tang Yu-Hua (唐玉华), Wu Jun-Jie (吴俊杰), Zhu Xuan (朱玄), Zhou Jing (周静), Huang Da (黄达) SPICE modeling of flux-controlled unipolar memristive devices 2013 Chin. Phys. B 22 078901

[1]	Chua L O 1971 IEEE Trans. Circ. Syst. I 18 507
[2]	Chua L O and Kang S M 1976 Proc. IEEE 64 209
[3]	Strukov D B, Snider G S, Stewart D R and Williams R S 2008 Nature 453 80
[4]	Waser R and Aono M 2007 Nat. Mater. 6 833
[5]	Waser R, Dittmann R, Staikov G and Szot K 2009 Adv. Mater. 21 2632
[6]	Jo S H and Lu W 2008 Nano Lett. 8 392
[7]	Jo S H, Kim K H and Lu W 2009 Nano Lett. 9 870
[8]	Yang Y C, Pan F, Liu Q, Liu M and Zeng F 2009 Nano Lett. 9 1636
[9]	Li Y T, Long S B, Lu H B, Liu Q, Wang Q, Wang Y, Zhang S, Lian W T, Liu S and Liu L 2011 Chin. Phys. B 20 017305
[10]	Kim K H, Gaba S, Wheeler D, Cruz-Albrecht J M, Hussain T, Srinivasa N and Lu W 2012 Nano Lett. 12 389
[11]	Xia Q F, RobinettW, CumbieMW, Banerjee N, Cardinali T J, Yang J J, WuW, Li X M, TongWM, Strukov D B, Snider G S, Medeiros-Ribeiro G and Williams R S 2009 Nano Lett. 9 3640
[12]	Borghetti J, Snider G S, Kuekes P J, Yang J J, Stewart D R andWilliams R S 2010 Nature 464 873
[13]	Sun X W, Li G Q, Ding L H, Yang N and Zhang W F 2011 Appl. Phys. Lett. 9 072101
[14]	Jo S H, Chang T, Ebong I, Bhadviya B B, Mazumder P and LuW2010 Nano Lett. 10 1297
[15]	Snider G, Amerson R, Carter D, Abdalla H, Qureshi M S, Léveillé J, Versace M, Ames H, Patrick S, Chandler B, Gorchetchnikov A and Mingolla E 2011 Computer 44 21
[16]	Itoh M and Chua L O 2008 Int. J. Bifurcat. Chaos 18 3183
[17]	Pershin Y V and Ventra M D 2010 IEEE Trans. Circ. Syst. I 57 1857
[18]	Shin S, Kim K and Kang S M 2011 IEEE Trans. Nanotechnol. 10 266
[19]	Bao B C, Liu Z and Xu J P 2010 Chin. Phys. B 19 030510
[20]	Chang W Y, Lai Y C, Wu T B, Wang S F, Chen F and Tsai M J 2008 Appl. Phys. Lett. 92 022110
[21]	Yan Z B, Li S Z, Wang K F and Liu J M 2010 Appl. Phys. Lett. 96 012103
[22]	Biolek Z, Biolek D and Biolková V 2009 Radioengineering 18 210
[23]	Rák A and Cserey G 2010 IEEE Trans. Comput-Aided Des. Integr. Circuits Syst. 29 632
[24]	Shin S, Kim K and Kang S M 2010 IEEE Trans. Comput-Aided Des. Integr. Circuits Syst. 29 590
[25]	Batas D and Fiedler H 2011 IEEE Trans. Nanotechnol. 10 250
[26]	Zhou J and Huang D 2011 Chin. Phys. B 21 048401
[27]	Fang X D, Tang Y H and Wu J J 2012 Chin. Phys. B 21 098901
[28]	Wang X Y, Andrew L F, Herbert H C I, Victor S and Qi W G 2012 Chin. Phys. B 21 108501
[29]	Kvatinsky S, Friedman E G, Kolodny A and Weiser U C 2012 IEEE Trans. Circ. Syst. I 60 211
[30]	Pershin Y V and Ventra M D 2012 http://arxiv1204.2600v4
[31]	Lee J G, Kim D H, Lee J G, Kim D M and Min K S 2007 IEICE Electron. Express 4 600
[32]	Akou N, Asai T, Yanagida T, Kawai T and Amemiya Y 2010 IEICE Electron. Express 7 1467
[33]	Chua L O 2011 Appl. Phys. A 102 765
[34]	Avant! Corporation 2012 http://web.engr.oregonstate.edu/moon/-ece323/hspice98/files/Star-Hspice.pdf

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SPICE modeling of flux-controlled unipolar memristive devices

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