Please wait a minute...
Chin. Phys. B, 2013, Vol. 22(6): 067304    DOI: 10.1088/1674-1056/22/6/067304
Special Issue: TOPICAL REVIEW — Topological insulator
TOPICAL REVIEW—Topological insulator Prev   Next  

Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111)

Gao Chun-Lei (高春雷)a, Qian Dong (钱冬)a, Liu Can-Hua (刘灿华)a, Jia Jin-Feng (贾金锋)a, Liu Feng (刘锋)b
a Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China;
b Department of Materials Science & Engineering, University of Utah, Salt Lake City, Utah 84112, USA
Abstract  Providing the strong spin-orbital interaction, Bismuth is the key element in the family of three-dimensional topological insulators. At the same time, Bismuth itself also has very unusual behavior, existing from the thinnest unit to bulk crystals. Ultrathin Bi (111) bilayers have been theoretically proposed as a two-dimensional topological insulator. The related experimental realization achieved only recently, by growing Bi (111) ultrathin bilayers on topological insulator Bi2Te3 or Bi2Se3 substrates. In this review, we started from the growth mode of Bi (111) bilayers and reviewed our recent progress in the studies of the electronic structures and the one-dimensional topological edge states using scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and first principles calculations.
Keywords:  topological insulators      edge states      electronic structures      Bi bilayer  
Received:  20 April 2013      Accepted manuscript online: 
PACS:  73.20.r  
  74.25.Jb (Electronic structure (photoemission, etc.))  
  71.20.-b (Electron density of states and band structure of crystalline solids)  
Fund: Project supported by the National Basic Research Program of China (Grants Nos. 2012CB927401, 2011CB921902, 2013CB921902, and 2011CB922200), the National Natural Science Foundation of China (Grants Nos. 91021002, 11174199, 11134008, and 11274228), and SCSTC (Grant Nos. 11JC1405000, 11PJ1405200, and 12JC1405300).
Corresponding Authors:  Gao Chun-Lei, Qian Dong     E-mail:  clgao@sjtu.edu.cn; dqian@stju.edu.cn

Cite this article: 

Gao Chun-Lei (高春雷), Qian Dong (钱冬), Liu Can-Hua (刘灿华), Jia Jin-Feng (贾金锋), Liu Feng (刘锋) Topological edge states and electronic structures of a 2D topological insulator: Single-bilayer Bi (111) 2013 Chin. Phys. B 22 067304

[1] Hasan M Z and Kane C L 2010 Rev. Mod. Phys. 82 3045
[2] Qi X L and Zhang S C 2011 Rev. Mod. Phys. 83 1057
[3] Fu L and Kane C L 2007 Phys. Rev. B 76 045302
[4] Bernevig B A, Hughes T L and Zhang S C 2006 Science 3141757
[5] Zhang H J, Liu C X, Qi X L, Dai X, Fang Z and Zhang S C 2009 Nat.Phys. 5 438
[6] Hsieh D, Qian D, Wray L, Xia Y, Hor Y S, Cava R J and Hasan M Z2008 Nature 452 970
[7] Xia Y, Qian D, Hsieh D, Wray L, Pal A, Lin H, Bansil A, Grauer D,Hor Y S, Cava R J and Hasan M Z 2009 Nat. Phys. 5 398
[8] Chen Y L, Analytis J G, Chu J H, Liu Z K, Mo S K, Qi X L, Zhang HJ, Lu D H, Dai X and Fang Z 2009 Science 325 178
[9] Hsieh D, Xia Y, Qian D, Wray L, Meier F, Dil J H, Osterwalder J,Patthey L, Fedorov A V, Lin H, Bansil A, Grauer D, Hor Y S, Cava RJ and Hasan M Z 2009 Phys. Rev. Lett. 103 146401
[10] Wang M X, Liu C H, Xu J P, Yang F, Miao L, Yao M Y, Gao C L, ShenC Y, Ma X C, Chen X, Xu Z A, Liu Y, Zhang S C, Qian D, Jia J F andXue Q K 2012 Science 336 52
[11] Koenig M, Wiedmann S, Bruene C, Roth A, Buhmann H, MolenkampL W, Qi X L and Zhang S C 2007 Science 318 766
[12] Hofmann Ph 2006 Prog. Surf. Sci. 81 191
[13] Murakami S 2006 Phys. Rev. Lett. 97 236805
[14] Koroteev Yu M, Bihlmayer G, Chulkov E V and Bluegel S 2008 Phys.Rev. B 77 045428
[15] Liu Z, Liu C X, Wu Y S, Duan W H, Liu F and Wu J 2011 Phys. Rev.Lett. 107 136805
[16] Wada M, Murakami S, Freimuth F and Bihlmayer G 2011 Phys. Rev. B83 121310
[17] Hirahara T, Bihlmayer G, Sakamoto Y, Yamada M, Miyazaki H,Kimura S I, Blügel and Hasegawa1 S 2011 Phys. Rev. Lett. 107 166801
[18] Yang F, Miao L, Wang Z F, Yao M Y, Zhu F F, Song Y R, Wang M X,Xu J P, Fedorov A V, Sun Z, Zhang G B, Liu C H, Liu F, Qian D, GaoC L and Jia J F 2012 Phys. Rev. Lett. 109 016801
[19] Xiao S, Wei D and Jin X F 2012 Phys. Rev. Lett. 109 166805
[20] Miao L, Wang Z F, Ming W M, Yao M, Wang M, Yang F, Song Y R,Zhu F F, Fedorov A, Sun Z, Gao C L, Liu C, Xue Q K, Liu C X, LiuF, Qian D and Jia J F 2013 Proceedings of the National Academy ofSciences of the United States of American (PNAS) 110 2758
[21] Wang Z F, Yao M Y, Ming W M, Miao L, Zhu F F, Liu C H, Gao C L,Qian D, Jia J F and Liu F 2013 Nature Commun. 4 1384
[22] Nagao1 T, Sadowski J T, Saito M, Yaginuma S, Fujikawa Y, Kogure T,Ohno T, Hasegawa Y, Hasegawa S and Sakurai T 2004 Phys. Rev. Lett.93 105501
[23] Hirahara T, Nagao T, Matsuda I, Bihlmayer G, Chulkov E V, KoroteevY M, Echenique P M, Saito M and Hasegawa S Phys. Rev. Lett. 97146803
[24] Jia J F, Ma X C, Chen X, Sakurai T and Xue Q K 2011 J. Phys. D:Appl. Phys. 44 464007
[25] Li Y Y, Wang G, Zhu X G, Liu M H, Ye C, Chen X, Wang Y Y, He K,Wang L L, Ma X C, Zhang H J, Dai X, Fang Z, Xie X C, Liu Y, Qi XL, Jia J F, Zhang S C and Xue Q K 2010 Adv. Mater. 22 4002
[26] Wang G, Zhu X G, Sun Y Y, Li Y Y, Zhang T, Wen J, Chen X, He K,Wang L L, Ma X C, Jia J F, Zhang S B and Xue Q K 2011 Adv. Mater.23 2929
[27] Zhang T, Cheng P, Chen X, Jia J F, Ma X C, He K, Wang L L, ZhangH J, Dai X, Fang Z, Xie X C and Xue Q K 2009 Phys. Rev. Lett. 103266803
[28] Hor Y S, Roushan P, Beidenkopf H, Seo J, Qu D, Checkelsky J G, WrayL A, Hsieh D, Xia Y, Xu S Y, Qian D, Hasan M Z, Ong N P, YazdaniA and Cava R J 2010 Phys. Rev B 81 195203
[29] Song Y R, Yang F, Yao M, Zhu F, Miao L, Xu J, Wang M, Li H, YaoX, Ji F, Qiao S, Sun Z, Zhang G B, Gao B, Liu C, Qian D, Gao C L andJia J F 2012 Appl. Phys. Lett. 100 242403
[30] Li H, Song Y R, Yao M Y, Yang F, Miao L, Zhu F F, Liu C H, Gao CL, Qian D, Yao X, Jia J F, Shi Y J andWu D 2012 Appl. Phys. Lett. 101072406
[31] Zhang Y, He K, Chang C, Song C, Wang L, Chen X, Jia J F, Fang Z,Dai X, Shan W Y, Shen S Q, Niu Q, Qi X L, Zhang S C, Ma X C andXue Q K 2010 Nat. Phys. 6 584
[32] Damascelli A, Hussain Z and Shen Z X 2003 Rev. Mod. Phys. 75 473
[33] Bostwick A, Ohta T, Seyller T Horn K and Rotenberg E 2007 Nat.Phys. 3 36
[34] Bostwick A, Speck F, Seyller T, Horn K, Polini M, Asgari R MacDonaldA H and Rotenberg E 2010 Science 328 999
[35] Siegel D A, Park C H Hwang C Y Deslippe J Fedorov A V Louie S Gand Lanzara A 2011 Proceedings of the National Academy of Sciencesof the United States of American (PNAS) 108 11365
[36] Walter A L, Bostwick A, Jeon K J, Speck F, Ostler M, Seyller T, MoreschiniL, Chang Y J, Polini M, Asgari R, MacDonald A H, Horn K andRotenberg E 2011 Phys. Rev. B 84 085410
[37] Kresse G and Hafner J 1993 Phys. Rev. B 47 558
[38] Yu D, Lupton E M, Liu M, Liu W and Liu F 2008 Nano Res. 1 56
[39] Tao C and Jiao L, et al. 2011 Nat. Phys. 7 616
[40] Lai K, Kundhikanjana W, Kelly M A, Shen Z X, Shabani J andShayegan M 2011 Phys. Rev. Lett. 107 176809
[41] Cheng P, Song C, Zhang T, Zhang Y, Wang Y, Jia J F, Wang J, Wang YY, Zhu B F, Chen X, Ma X C, He K, Wang L, Dai X, Fang Z, Xie X C,Qi X L, Liu C X, Zhang S C and Xue Q K 2010 Phys. Rev. Lett. 105076801
[42] Park K, Heremans J J, Scarola V W and Minic D 2010 Phys. Rev. Lett.105 186801
[43] O V, Moore J E and Louie S G 2010 Phys. Rev. Lett. 105 266806
[44] Ast C R Henk J Ernst A Moreschini L Falub M C Pacilé D Bruno PKern K and Grioni M 2007 Phys. Rev. Lett. 98 186807
[45] Mathias S, Ruffing A, Deicke F, Wiesenmayer M, Sakar I, BihlmayerG, Chulkov E V, Koroteev Yu M, Echenique P M, Bauer M andAeschlimann M 2010 Phys. Rev. Lett. 104 066802
[46] Gierz I, Suzuki T, Frantzeskakis E, Pons S, Ostanin S, Ernst A, HenkJ, Grioni M, Kern K and Ast C R 2009 Phys. Rev. Lett. 103 046803
[47] Ohtsubo Y Hatta S Yaji K Okuyama H Miyamoto K Okuda T KimuraA Namatame H TaniguchiMand Aruga T 2010 Phys. Rev. B 82 201307
[1] Hall conductance of a non-Hermitian two-band system with k-dependent decay rates
Junjie Wang(王俊杰), Fude Li(李福德), and Xuexi Yi(衣学喜). Chin. Phys. B, 2023, 32(2): 020305.
[2] Bandgap evolution of Mg3N2 under pressure: Experimental and theoretical studies
Gang Wu(吴刚), Lu Wang(王璐), Kuo Bao(包括), Xianli Li(李贤丽), Sheng Wang(王升), and Chunhong Xu(徐春红). Chin. Phys. B, 2022, 31(6): 066205.
[3] High-throughput computational material screening of the cycloalkane-based two-dimensional Dion—Jacobson halide perovskites for optoelectronics
Guoqi Zhao(赵国琪), Jiahao Xie(颉家豪), Kun Zhou(周琨), Bangyu Xing(邢邦昱), Xinjiang Wang(王新江), Fuyu Tian(田伏钰), Xin He(贺欣), and Lijun Zhang(张立军). Chin. Phys. B, 2022, 31(3): 037104.
[4] Quantum transport signatures of non-trivial topological edge states in a ring-shaped Su-Schrieffer-Heeger double-chain system
Cheng-Zhi Ye(叶成芝), Lan-Yun Zhang(张蓝云), and Hai-Bin Xue(薛海斌). Chin. Phys. B, 2022, 31(2): 027304.
[5] Change-over switch for quantum states transfer with topological channels in a circuit-QED lattice
Liu-Yong Cheng(程留永), Li-Na Zheng(郑黎娜), Ruixiang Wu(吴瑞祥), Hong-Fu Wang(王洪福), and Shou Zhang(张寿). Chin. Phys. B, 2022, 31(2): 020305.
[6] Topological photonic states in gyromagnetic photonic crystals: Physics, properties, and applications
Jianfeng Chen(陈剑锋) and Zhi-Yuan Li(李志远). Chin. Phys. B, 2022, 31(11): 114207.
[7] Efficient and stable wireless power transfer based on the non-Hermitian physics
Chao Zeng(曾超), Zhiwei Guo(郭志伟), Kejia Zhu(祝可嘉), Caifu Fan(范才富), Guo Li(李果), Jun Jiang(江俊), Yunhui Li(李云辉), Haitao Jiang(江海涛), Yaping Yang(羊亚平), Yong Sun(孙勇), and Hong Chen(陈鸿). Chin. Phys. B, 2022, 31(1): 010307.
[8] Spin and spin-orbit coupling effects in nickel-based superalloys: A first-principles study on Ni3Al doped with Ta/W/Re
Liping Liu(刘立平), Jin Cao(曹晋), Wei Guo(郭伟), and Chongyu Wang(王崇愚). Chin. Phys. B, 2022, 31(1): 016105.
[9] Floquet bands and photon-induced topological edge states of graphene nanoribbons
Weijie Wang(王威杰), Xiaolong Lü(吕小龙), and Hang Xie(谢航). Chin. Phys. B, 2021, 30(6): 066701.
[10] Quantum dynamics on a lossy non-Hermitian lattice
Li Wang(王利), Qing Liu(刘青), and Yunbo Zhang(张云波). Chin. Phys. B, 2021, 30(2): 020506.
[11] Erratum to “Floquet bands and photon-induced topological edge states of graphene nanoribbons”
Weijie Wang(王威杰), Xiaolong Lü(吕小龙), and Hang Xie(谢航). Chin. Phys. B, 2021, 30(11): 119901.
[12] High winding number of topological phase in non-unitary periodic quantum walk
Yali Jia(贾雅利) and Zhi-Jian Li(李志坚). Chin. Phys. B, 2021, 30(10): 100301.
[13] Edge states enhanced by long-range hopping: An analytical study
Huiping Wang(王会平), Li Ren(任莉), Liguo Qin(秦立国), and Yueyin Qiu(邱岳寅). Chin. Phys. B, 2021, 30(10): 107301.
[14] Two-dimensional topological semimetals
Xiaolong Feng(冯晓龙), Jiaojiao Zhu(朱娇娇), Weikang Wu(吴维康), and Shengyuan A. Yang(杨声远). Chin. Phys. B, 2021, 30(10): 107304.
[15] Progress on 2D topological insulators and potential applications in electronic devices
Yanhui Hou(侯延辉), Teng Zhang(张腾), Jiatao Sun(孙家涛), Liwei Liu(刘立巍), Yugui Yao(姚裕贵), Yeliang Wang(王业亮). Chin. Phys. B, 2020, 29(9): 097304.
No Suggested Reading articles found!