Effect of vacancy charge state on positron annihilation in silicon

doi:10.1088/1674-1056/22/10/106104

Abstract The charge-state-dependent lattice relaxation of mono-vacancy in silicon is studied using the first-principles pseudopotential plane-wave method. We observe that the structural relaxation for the first-neighbor atoms of the mono-vacancy is strongly dependent on its charge state. The difference in total electron density between with and without charge states in mono-vacancy and its relevant change due to the localized positron are also examined by means of first-principles simulation, demonstrating the strong interplay between positron and electron. Our calculations reveal that the positron lifetime decreases with absolute charge value increasing.

Keywords: vacancy charge state positron annihilation

Received: 15 December 2012
Revised: 07 April 2013
Accepted manuscript online:

PACS:	61.72.jd	(Vacancies)
	71.55.-i	(Impurity and defect levels)
	78.70.Bj	(Positron annihilation)

Fund: Project supported by the Fundamental Research Funds for the Central Universities and the National Natural Science Fundation of China (Grant Nos. 11105139 and 11175171).

Corresponding Authors: Ye Bang-Jiao
E-mail: bjye@ustc.edu.cn

Cite this article:

Liu Jian-Dang (刘建党), Cheng Bin (成斌), Kong Wei (孔伟), Ye Bang-Jiao (叶邦角) Effect of vacancy charge state on positron annihilation in silicon 2013 Chin. Phys. B 22 106104

[1]	Puska M J and Nieminen R M 1994 Rev. Mod. Phys. 66 841
[2]	De Lima J J P 2011 Nuclear Medicine Imaging Physics (London: Taylor & Francis) p. 74
[3]	Liu J D, Zhang J, Zhang L J, Hao Y P, Guo W F, Cheng B and Ye B J 2011 Chin. Phys. B 20 057802
[4]	McGuire S, Keeble D J, Mason R E, Coleman P G, Koutsonas Y and Jackson T J 2006 J. Appl. Phys. 100 044109
[5]	Seebauer E G and Kratzer M C 2006 Mater. Sci. Eng. R-Rep. 55 57
[6]	Bardeleben H J, Cantin J L, Gerstmann U, Scholle A, Greulich-Weber S, Rauls E, Landmann M, Schmidt W G, Gentils A, Botsoa J and Barthe M F 2012 Phys. Rev. Lett. 109 206402
[7]	Liu J D, Cheng B, Zhang J, Zhang L J, Weng H M and Ye B J 2011 Chin. Phys. B 20 108105
[8]	Van Vechten J A 1988 Phys. Rev. B 38 9913
[9]	Arponen J and Pajanne E 1979 Ann. Phys. 121 343
[10]	Barbiellini B, Puska M J, Torsti T and Nieminen R M 1995 Phys. Rev. B 51 7341
[11]	Perdew J P, Burke K and Ernzerhof M 1996 Phys. Rev. Lett. 77 3865
[12]	Többens D M, Stüßer N, Knorr K, Mayer H M and Lampert G 2001 Mater. Sci. Forum 378-381 288
[13]	Seebauer E G and Kratzer M C 2009 Charged Semiconductor Defects: Structure, Thermodynamics and Diffusion (London: Springer) p. 76
[14]	Lento J and Nieminen R M 2003 J. Phys.: Condens. Matter 15 4387
[15]	Gebauer J, Rudolf F, Polity A, Krause-Rehberg R, Martin J and Becker P 1999 Appl. Phys. A 68 411
[16]	Arutyunov N Y, Elsayed M, Krause-Rehberg R, Emtsev V V, Oganesyan G A and Kozlovski V V 2013 J. Phys.: Condens. Matter 25 035801
[17]	Laasonen K, Alatalo M, Puska M J and Nieminen R M 1991 J. Phys.: Condens. Matter 3 7217

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