The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

doi:10.1088/1674-1056/22/10/105101

Abstract The mechanism of hydrogen plasma passivation for poly-crystalline silicon (poly-Si) thin films is investigated by optical emission spectroscopy (OES) combined with Hall mobility, Raman spectra, absorption coefficient spectra, and so on. It is found that different kinds of hydrogen plasma radicals are responsible for passivating different defects in poly-Si. The H_α with lower energy is mainly responsible for passivating the solid phase crystallization (SPC) poly-Si whose crystallization precursor is deposited by plasma-enhanced chemical vapor deposition (PECVD). The H^* with higher energy may passivate the defects related to teh Ni impurity around the grain boundaries more effectively. In addition, H_β and H_γ with the highest energy are required to passivate intra-grain defects in the poly-Si crystallized by SPC but whose precursor is deposited by low pressure chemical vapor deposition (LPCVD).

Keywords: hydrogen plasma passivation poly-Si mechanism

Received: 10 December 2012
Revised: 14 April 2013
Accepted manuscript online:

PACS:	51.50.+v	(Electrical properties)
	52.25.-b	(Plasma properties)
	61.82.Fk	(Semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 61076006) and the Flat-Panel Display Special Project of China’s 863 Plan (Grant No. 2008AA03A335).

Corresponding Authors: Li Juan
E-mail: lj1018@nankai.edu.cn

Cite this article:

Li Juan (李娟), Luo Chong (罗翀), Meng Zhi-Guo (孟志国), Xiong Shao-Zhen (熊绍珍), Hoi Sing Kwok (郭海威) The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film 2013 Chin. Phys. B 22 105101

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