Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template

doi:10.1088/1674-1056/21/8/087802

Abstract InGaN/GaN epilayers, which are grown on sapphire substrates by metal-organic chemical-vapour deposition (MOCVD) method, are formed into nanorod arrays using inductively coupled plasma etching via self-assembled Ni nanomasks. The formation of nanorod arrays eliminates the tilt of the InGaN (0002) crystallographic plane with respect to its GaN bulk layer. Photoluminescence results show an apparent S-shaped dependence on temperature. The light extraction efficiency and intensity of photoluminescence emission at low temperature less than 30 K for the nanorod arrays are enhanced by the large surface area, which increases the quenching effect because of high density of surface states for the temperature above 30 K. Additionally, a red-shift for the InGaN/GaN nanorod arrays is observed due to the strain relaxation, which is confirmed by reciprocal space mapping measurements.

Keywords: InGaN/GaN nanorod arrays photoluminescence strain relaxation recombination

Received: 20 December 2011
Revised: 09 February 2012
Accepted manuscript online:

PACS:	78.66.Fd	(III-V semiconductors)
	78.67.-n	(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
	74.25.Gz	(Optical properties)

Fund: Project supported by the SONY-SINANO Joint Project (Grant No. Y1AAQ11001), the Suzhou Solar Cell Research Project, China (Grant No. ZXJ0903), and the International S & T Cooperation Projects (SINO-Japan), the Science Fund of the Ministry of Science and Technology of the People's Republic of China (Grant No. 2010DFA22770).

Corresponding Authors: Zheng Xin-He
E-mail: xhzheng2009@sinano.ac.cn

Cite this article:

Zhang Dong-Yan (张东炎), Zheng Xin-He (郑新和), Li Xue-Fei (李雪飞), Wu Yuan-Yuan (吴渊渊), Wang Hui (王辉), Wang Jian-Feng (王建峰), Yang Hui (杨辉) Strain relaxation and optical properties of etched In_0.19Ga_0.81N nanorod arrays on the GaN template 2012 Chin. Phys. B 21 087802

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Strain relaxation and optical properties of etched In0.19Ga0.81N nanorod arrays on the GaN template

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Strain relaxation and optical properties of etched In_0.19Ga_0.81N nanorod arrays on the GaN template