Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser

doi:10.1088/1674-1056/21/6/064209

Abstract A new nanolaser concept using silicon quantum dots (QDs) is proposed. The conduction band opened by the quantum confinement effect gives the pumping levels. Localized states in the gap due to some surface bonds on Si QDs can be formed for the activation of emission. An inversion of population can be generated between the localized states and the valence band in a QD fabricated by using a nanosecond pulse laser. Coupling between the active centres formed by localized states and the defect states of the two-dimensional (2D) photonic crystal can be used to select the model in the nanolaser.

Keywords: nanolaser Si quantum dots localized states photonic crystal

Received: 14 July 2011
Revised: 22 November 2011
Accepted manuscript online:

PACS:	42.55.-f	(Lasers)
	68.65.Hb	(Quantum dots (patterned in quantum wells))
	78.45.+h	(Stimulated emission)
	78.55.Mb	(Porous materials)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60966002) and the National Key Laboratory Fund of Surface Physics at Fudan University, (Grant No. 20090606).

Corresponding Authors: Huang Wei-Qi, Liu Shi-Rong
E-mail: WQHuang2001@yahoo.com; Shirong@yahoo.com

Cite this article:

Huang Wei-Qi(黄伟其), Chen Hang-Qiong(陈汉琼), Shu Qin(苏琴), Liu Shi-Rong(刘世荣), and Qin Chao-Jian(秦朝建) Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser 2012 Chin. Phys. B 21 064209

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Activation of silicon quantum dots and coupling between the active centre and the defect state of the photonic crystal in a nanolaser

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