The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

doi:10.1088/1674-1056/20/9/098503

Abstract InGaN based light-emitting diodes (LEDs) with different electron blocking layers have been numerically investigated using the APSYS simulation software. It is found that the structure with a p-AlInN electron blocking layer showes improved light output power, lower current leakage, and smaller efficiency droop. Based on numerical simulation and analysis, these improvements of the electrical and optical characteristics are mainly attributed to the efficient electron blocking in the InGaN/GaN multiple quantum wells (MQWs).

Keywords: GaN-based light-emitting diodes electron blocking layer AlInN

Received: 19 January 2011
Revised: 26 March 2011
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

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Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer 2011 Chin. Phys. B 20 098503

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The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer

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