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Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching |
He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗)† |
Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
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Abstract GaN-based light-emitting diodes (LEDs) with surface-textured indium tin oxide (ITO) as a transparent current spreading layer were fabricated. The ITO surface was textured by inductively coupled plasma (ICP) etching technology using a monolayer of nickel (Ni) nanoparticles as the etching mask. The luminance intensity of ITO surface-textured GaN-based LEDs was enhanced by about 34% compared to that of conventional LED without textured ITO layer. In addition, the fabricated ITO surface-textured GaN-based LEDs would present a quite good performance in electrical characteristics. The results indicate that the scattering of photons emitted in the active layer was greatly enhanced via the textured ITO surface, and the ITO surface-textured technique could have a potential application in improving photoelectric characteristics for manufacturing GaN-based LEDs of higher brightness.
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Received: 28 September 2009
Accepted manuscript online:
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PACS:
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85.60.Jb
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(Light-emitting devices)
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81.65.Cf
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(Surface cleaning, etching, patterning)
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68.55.-a
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(Thin film structure and morphology)
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68.35.B-
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(Structure of clean surfaces (and surface reconstruction))
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61.46.Df
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(Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots))
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72.40.+w
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(Photoconduction and photovoltaic effects)
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Fund: Project supported by the Production
and Research Program of Guangdong Province and Ministry of Education
(Grant No.~2009B090300338), Guangdong Natural Science Foundation of
China (Grant No.~8251063101000007), Guangdong Science and Technology
Plan of China |
Cite this article:
He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗) Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching 2010 Chin. Phys. B 19 068101
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