Blue InGaN light-emitting diodes with dip-shaped quantum wells

doi:10.1088/1674-1056/20/10/108504

Abstract InGaN based light-emitting diodes (LEDs) with dip-shaped quantum wells and conventional rectangular quantum wells are numerically investigated by using the APSYS simulation software. It is found that the structure with dip-shaped quantum wells shows improved light output power, lower current leakage and less efficiency droop. Based on numerical simulation and analysis, these improvements on the electrical and the optical characteristics are attributed mainly to the alleviation of the electrostatic field in dip-shaped InGaN/GaN multiple quantum wells (MQWs).

Keywords: GaN-based light-emitting diodes dip-shaped quantum wells

Received: 06 April 2011
Revised: 31 May 2011
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 50602018), the Science and Technology Program of Guangdong Province of China (Grant Nos. 2010B090400456, 2009B011100003, and 2010A081002002), and the Science and Technology Program of Guangzhou City, China (Grant No. 2010U1-D00191).

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Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) Blue InGaN light-emitting diodes with dip-shaped quantum wells 2011 Chin. Phys. B 20 108504

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Blue InGaN light-emitting diodes with dip-shaped quantum wells

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