Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

doi:10.1088/1674-1056/22/9/098504

Abstract The advantages of a blue InGaN-based light-emitting diode with a p-InGaN layer inserted in the GaN barriers is studied. The carrier concentration in the quantum well, radiative recombination rate in the active region, output power, and internal quantum efficiency are investigated. The simulation results show that the InGaN-based light-emitting diode with a p-InGaN layer inserted in the barriers has better performance over its conventional counterpart and the light emitting diode with p-GaN inserted in the barriers. The improvement is due to enhanced Mg acceptor activation and enhanced hole injection into the quantum wells.

Keywords: GaN-based light-emitting diodes p-InGaN layers Mg acceptor

Received: 14 January 2013
Revised: 21 March 2013
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	87.15.A-	(Theory, modeling, and computer simulation)
	78.60.Fi	(Electroluminescence)
	73.61.Ey	(III-V semiconductors)

Corresponding Authors: Li Shu-Ti
E-mail: lishuti@scnu.edu.cn

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Wang Xing-Fu (王幸福), Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体) Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers 2013 Chin. Phys. B 22 098504

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[1]	Droop improvement in blue InGaN light emitting diode with GaN/InGaN superlattice barriers Tong Jin-Hui (童金辉), Zhao Bi-Jun (赵璧君), Wang Xing-Fu (王幸福), Chen Xin (陈鑫), Ren Zhi-Wei (任志伟), Li Dan-Wei (李丹伟), Zhuo Xiang-Jing (卓祥景), Zhang Jun (章俊), Yi Han-Xiang (易翰翔), Li Shu-Ti (李述体). Chin. Phys. B, 2013, 22(6): 068505.
[2]	Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole injection layers Wu Le-Juan(仵乐娟), Li Shu-Ti(李述体), Liu Chao(刘超), Wang Hai-Long(王海龙), Lu Tai-Ping(卢太平), Zhang Kang(张康), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), and Yang Xiao-Dong(杨孝东) . Chin. Phys. B, 2012, 21(6): 068506.
[3]	The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron blocking layer Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) . Chin. Phys. B, 2011, 20(9): 098503.
[4]	Blue InGaN light-emitting diodes with dip-shaped quantum wells Lu Tai-Ping(卢太平), Li Shu-Ti(李述体), Zhang Kang(张康), Liu Chao(刘超), Xiao Guo-Wei(肖国伟), Zhou Yu-Gang(周玉刚), Zheng Shu-Wen(郑树文), Yin Yi-An(尹以安), Wu Le-Juan(仵乐娟), Wang Hai-Long(王海龙), and Yang Xiao-Dong(杨孝东) . Chin. Phys. B, 2011, 20(10): 108504.
[5]	Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching He An-He(何安和), Zhang Yong(章勇), Zhu Xue-Hui(朱学绘), Chen Xian-Wen(陈献文), Fan Guang-Han(范广涵), and He Miao(何苗). Chin. Phys. B, 2010, 19(6): 068101.

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Efficiency and droop improvement in a blue InGaN-based light emitting diode with a p-InGaN layer inserted in the GaN barriers

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