INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Size and temperature effects on electric properties of CdTe/ZnTe quantum rings |
Woo-Pyo Hong† and Seoung-Hwan Park |
Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongbuk 712-702, Korea |
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Abstract The electronic properties of CdTe/ZnTe quantum rings (QRs) are investigated as functions of size and temperature using an eight-band strain-dependent k·p Hamiltonian. The size effects of diameter and height on the strain distributions around the QRs are studied. We find that the interband transition energy, defined as the energy difference between the ground electronic and the ground heavy-hole subbands, increases with the increasing QR inner diameter regardless of the temperature, while the interband energy decreases with the increasing QR height. This is attributed to the reduction of subband energies in both the conduction and the valence bands due to the strain effects. Our model, in the framework of the finite element method and the theory of elasticity of solids, shows a good agreement with the temperature-dependent photoluminescence measurement of the interband transition energies.
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Received: 30 March 2011
Revised: 13 April 2011
Accepted manuscript online:
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PACS:
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85.60.Bt
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(Optoelectronic device characterization, design, and modeling)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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78.20.Bh
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(Theory, models, and numerical simulation)
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Cite this article:
Woo-Pyo Hong and Seoung-Hwan Park Size and temperature effects on electric properties of CdTe/ZnTe quantum rings 2011 Chin. Phys. B 20 098502
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