Growth and properties of wide spectral white light emitting diodes

doi:10.1088/1674-1056/20/11/116801

Abstract Wide spectral white light emitting diodes have been designed and grown on a sapphire substrate by using a metal-organic chemical vapor deposition system. Three quantum wells with blue-light-emitting, green-light-emitting and red-light-emitting structures were grown according to the design. The surface morphology of the film was observed by using atomic force microscopy. The films were characterized by their photoluminescence measurements. X-ray diffraction θ/2θ scan spectroscopy was carried out on the multi-quantum wells. The secondary fringes of the symmetric ω/2θ X-ray diffraction scan peaks indicate that the thicknesses and the alloy compositions of the individual quantum wells are repeatable throughout the active region. The room temperature photoluminescence spectra of the structures indicate that the white light emission of the multi-quantum wells is obtained. The light spectrum covers 400-700 nm, which is almost the whole visible light spectrum.

Keywords: metal-organic chemical vapor deposition GaN/InGaN multi-quantum wells group III-V semiconductor wide spectral white light

Received: 29 November 2010
Revised: 06 July 2011
Accepted manuscript online:

PACS:	68.43.Jk	(Diffusion of adsorbates, kinetics of coarsening and aggregation)
	66.30.H-	(Self-diffusion and ionic conduction in nonmetals)
	68.37.Hk	(Scanning electron microscopy (SEM) (including EBIC))
	68.55.A-	(Nucleation and growth)

Fund: Project supported by the Special Funds for Major State Basic Research Project, China (Grant No. 2011CB301900), the Hi-tech Research Project, China (Grant No. 2009AA03A198), the National Natural Science Foundation of China (Grant Nos. 60990311, 60721063, 60906025, 60936004, 60731160628, and 60820106003), the Nature Science Foundation of Jiangsu Province, China (Grant Nos. BK2008019, BK2010385, BK2009255, and BK2010178), and the Research Funds from NJU-Yangzhou Institute of Opto-electronics, China.

Cite this article:

Xie Zi-Li(谢自力), Zhang Rong(张荣), Fu De-Yi(傅德颐), Liu Bin(刘斌),Xiu Xiang-Qian(修向前), Hua Xue-Mei(华雪梅), Zhao Hong(赵红), Chen Peng(陈鹏),Han Ping(韩平), Shi Yi(施毅), and Zheng You-Dou(郑有炓) Growth and properties of wide spectral white light emitting diodes 2011 Chin. Phys. B 20 116801

[1]	Naka-mura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Sugimoto Y and Kiyoku H 1997 Jpn. J. Appl. Phys. bf36 L1059
[2]	Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Mat-sushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M and Chocho K 1997 Jpn. J. Appl. Phys. bf36 L1568
[3]	Park I K and Kim J Y 2008 Appl. Phys. Lett. bf92 091110
[4]	Xie Z L, Zhang R, Xia C T, Xiu X Q, Han P, Liu B, Zhao H, Jiang R L, Shi Y and Zheng Y D 2008 Chin. Phys. Lett. bf25 2185
[5]	Xie Z L, Zhang R, Han P, Zhou S M, Liu B, Xiu X Q, Chen P, Shi Y and Zheng Y D 2008 Chin. Phys. Lett. bf25 2614
[6]	Shei S C, Sheu J K, Tsai C M, Lai W C, Lee M L and Kuo C H 2006 Jpn. J. Appl. Phys. 45 2463
[7]	Xie Z L, Zhang R, Xiu X Q, Han P, Liu B, Chen L, Yu H Q, Jiang R L, Shi Y and Zheng Y D 2007 Acta Phys. Sin. bf56 6717 (in Chinese)

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