Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

doi:10.1088/1674-1056/19/12/127801

Abstract Undoped and Si-doped AlGaN/AlN multiple quantum wells (MQWs) were grown on AlN/Sapphire templates by metalorganic phase vapor epitaxy. High-resolution x-ray diffraction measurements showed the high interface quality of the MQWs little affected by Si-doping. Room-temperature (RT) cathodoluminescence measurements demonstrated a significant enhancement of the RT deep ultraviolet emission at about 240 nm from the AlGaN/AlN MQWs by Si doping. The mechanism of the improved emission efficiency was that the Si-doping partially screens the internal electric field and thus leads to the increase of the overlap between electron and hole wavefunctions. Further theoretical simulation also supports the above results.

Keywords: nitride quantum wells optical properties luminescence

Received: 27 January 2010
Revised: 19 February 2010
Accepted manuscript online:

PACS:	68.55.Ln	(Defects and impurities: doping, implantation, distribution, concentration, etc.)
	78.40.Fy	(Semiconductors)
	78.60.Hk	(Cathodoluminescence, ionoluminescence)
	78.67.De	(Quantum wells)
	81.15.Kk	(Vapor phase epitaxy; growth from vapor phase)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60976011), the Knowledge Innovation Program of CIOMP (Grant No. 08CY32M080), the Akasaki Research Center at Nagoya University, Japan, the Grants-in-Aid for Scientific Research of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant Nos. 18360008 and 18560010), and the Scientific Research on Priority Areas of the Ministry of Education, Culture, Sports, Science and Technology of Japan (Grant No. 18069006).

Cite this article:

Li Da-Bing(黎大兵), Hu Wei-Guo(胡卫国), Miyake Hideto(三宅秀人), Hiramatsu Kazumasa(平松和政), and Song Hang(宋航) Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs 2010 Chin. Phys. B 19 127801

[1]	Khan M A 2006 Phys. Stat. Sol. A 203 1764
[2]	Nakamura S and Fasol G 1997 The Blue Laser Diodes (New York: Springer)
[3]	Zhang J P, Khan M Asif, Sun W H, Wang H M, Chen C Q, Fareed Q, Kuokstis E and Yang J W 2002 Appl. Phys. Lett. 81 4392
[4]	Gaska R, Chen C, Yang J, Kuokstis E, Khan A, Tamulaitis G, Yilmaz I, Shur M S, Rojo J C and Schowalter L J 2002 Appl. Phys. Lett. 81 4658
[5]	Borisov B, NiKishin S, Kuryatkov V and Temkin H 2005 Appl. Phys. Lett. 87 191902
[6]	Tahtamouni T M Al, Nepal N, Lin J Y, Jiang H X and Chow W W 2006 Appl. Phys. Lett. 89 131922
[7]	Tahtamouni T M Al, Sedhain A, Lin J Y and Jiang H X 2007 Appl. Phys. Lett. 90 221105
[8]	Sun W H, Yang J W, Chen C Q, Zhang J P, Gaevski M E, Kuokstis E, Adivarahan V, Wang H M, Gong Z, Su M and Khan M Asif 2003 Appl. Phys. Lett. 83 2599
[9]	Ryu M Y, Yu J, Shin E J, Yu P W, Lee J I, Yu S K, Oh E S, Nam O H, Sone C S, Park Y J and Kim T I 2000 Solid Sate Commun. 116 675
[10]	Hirayama H and Aoyagi Y 1999 MRS Internet J. Nitride Semicond. Res. 4S1 G3.74
[11]	Martin G, Botchkarev A, Rockett A and Morkocc H 1996 Appl. Phys. Lett. 68 2541
[12]	Städele M, Majewski J A, Vogl P and Görling A 1997 Phys. Rev. Lett. 79 2089
[13]	Jogai B 2002 J. Appl. Phys. 91 3721
[14]	Lee K S, Yoon D H, Bae S B, Park M R and Kim G H 2002 ETRI Journal 24 270
[15]	Vurgaftman I and Meyer J R 2003 J. Appl. Phys. 94 3675
[16]	Fiorentini V, Bernardini F, Sala F D, Carlo A I and Lugli P 1999 Phys. Rev. B 60 8849
[17]	Carlo A D, Pescetelli S, Paciotti M, Lugli P and Graf M 1996 Solid State Commun. 98 803
[18]	Carlo A Di 1998 in Tightbinding Approach to Conputational Materials Science ed. Turchi P E A, Gonis A and Colombo L 1998 MRS Symposium Proceedings 491 389

[1]	Thermally enhanced photoluminescence and temperature sensing properties of Sc₂W₃O₁₂:Eu³⁺ phosphors Yu-De Niu(牛毓德), Yu-Zhen Wang(汪玉珍), Kai-Ming Zhu(朱凯明), Wang-Gui Ye(叶王贵), Zhe Feng(冯喆), Hui Liu(柳挥), Xin Yi(易鑫), Yi-Huan Wang(王怡欢), and Xuan-Yi Yuan(袁轩一). Chin. Phys. B, 2023, 32(2): 028703.
[2]	Review of a direct epitaxial approach to achieving micro-LEDs Yuefei Cai(蔡月飞), Jie Bai(白洁), and Tao Wang(王涛). Chin. Phys. B, 2023, 32(1): 018508.
[3]	Growth behaviors and emission properties of Co-deposited MAPbI₃ ultrathin films on MoS₂ Siwen You(游思雯), Ziyi Shao(邵子依), Xiao Guo(郭晓), Junjie Jiang(蒋俊杰), Jinxin Liu(刘金鑫), Kai Wang(王凯), Mingjun Li(李明君), Fangping Ouyang(欧阳方平), Chuyun Deng(邓楚芸), Fei Song(宋飞), Jiatao Sun(孙家涛), and Han Huang(黄寒). Chin. Phys. B, 2023, 32(1): 017901.
[4]	Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Chin. Phys. B, 2023, 32(1): 017801.
[5]	Optical and electrical properties of BaSnO₃ and In₂O₃ mixed transparent conductive films deposited by filtered cathodic vacuum arc technique at room temperature Jian-Ke Yao(姚建可) and Wen-Sen Zhong(钟文森). Chin. Phys. B, 2023, 32(1): 018101.
[6]	Enhanced photoluminescence of monolayer MoS₂ on stepped gold structure Yu-Chun Liu(刘玉春), Xin Tan(谭欣), Tian-Ci Shen(沈天赐), and Fu-Xing Gu(谷付星). Chin. Phys. B, 2022, 31(8): 087803.
[7]	Enhancing performance of GaN-based LDs by using GaN/InGaN asymmetric lower waveguide layers Wen-Jie Wang(王文杰), Ming-Le Liao(廖明乐), Jun Yuan(袁浚), Si-Yuan Luo(罗思源), and Feng Huang(黄锋). Chin. Phys. B, 2022, 31(7): 074206.
[8]	Up/down-conversion luminescence of monoclinic Gd₂O₃:Er³⁺ nanoparticles prepared by laser ablation in liquid Hua-Wei Deng(邓华威) and Di-Hu Chen(陈弟虎). Chin. Phys. B, 2022, 31(7): 078701.
[9]	Bandgap evolution of Mg₃N₂ under pressure: Experimental and theoretical studies Gang Wu(吴刚), Lu Wang(王璐), Kuo Bao(包括), Xianli Li(李贤丽), Sheng Wang(王升), and Chunhong Xu(徐春红). Chin. Phys. B, 2022, 31(6): 066205.
[10]	Exploration of structural, optical, and photoluminescent properties of (1-x)NiCo₂O₄/xPbS nanocomposites for optoelectronic applications Zein K Heiba, Mohamed Bakr Mohamed, Noura M Farag, and Ali Badawi. Chin. Phys. B, 2022, 31(6): 067801.
[11]	Exciton luminescence and many-body effect of monolayer WS₂ at room temperature Jian-Min Wu(吴建民), Li-Hui Li(黎立辉), Wei-Hao Zheng(郑玮豪), Bi-Yuan Zheng(郑弼元), Zhe-Yuan Xu(徐哲元), Xue-Hong Zhang(张学红), Chen-Guang Zhu(朱晨光), Kun Wu(吴琨), Chi Zhang(张弛), Ying Jiang(蒋英),Xiao-Li Zhu(朱小莉), and Xiu-Juan Zhuang(庄秀娟). Chin. Phys. B, 2022, 31(5): 057803.
[12]	Effect of different catalysts and growth temperature on the photoluminescence properties of zinc silicate nanostructures grown via vapor-liquid-solid method Ghfoor Muhammad, Imran Murtaza, Rehan Abid, and Naeem Ahmad. Chin. Phys. B, 2022, 31(5): 057801.
[13]	Doublet luminescence due to coexistence of excitons and electron-hole plasmas in optically excited CH₃NH₃PbBr₃ single crystal Jie Wang(王杰), Guang-Zhe Ma(马广哲), Lu Cao(曹露), Min Gao(高敏), and Dong Shi(石东). Chin. Phys. B, 2022, 31(4): 047104.
[14]	Tunable electronic properties of GaS-SnS₂ heterostructure by strain and electric field Da-Hua Ren(任达华), Qiang Li(李强), Kai Qian(钱楷), and Xing-Yi Tan(谭兴毅). Chin. Phys. B, 2022, 31(4): 047102.
[15]	Stability and luminescence properties of CsPbBr₃/CdSe/Al core-shell quantum dots Heng Yao(姚恒), Anjiang Lu(陆安江), Zhongchen Bai(白忠臣), Jinguo Jiang(蒋劲国), and Shuijie Qin(秦水介). Chin. Phys. B, 2022, 31(4): 046106.

No Suggested Reading articles found!

Viewed

Full text

Abstract

Cited

Metrics
Related Articles

Enhanced deep ultraviolet emission from Si-doped AlxGa1-xN/AlN MQWs

Cite this article:

Online attention

Enhanced deep ultraviolet emission from Si-doped Al_xGa_1-xN/AlN MQWs