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Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film |
Lu Zhao-Xin(卢兆信)a), Teng Bao-Hua(滕保华)a)†, Yang Xin(杨新)a), Rong Yong-Hui(戎永辉) a), and Zhang Huai-Wu(张怀武)b) |
a School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China; b School of Microelectronics and Solid State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China |
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Abstract By modifying the interchange interactions and the transverse fields on the epitaxy surface layer, this paper studies the phase transition properties of an n-layer ferroelectric thin film by the Fermi-type Green's function technique based on the transverse Ising model with a four-spin interaction. The special attention is given to the effect of the epitaxy surface layer on the first-order phase transition properties in the parameter space constructed by the ratios of the bulk transverse field and the bulk four-spin interaction to the bulk two-spin interaction with the framework of the higher-order decoupling approximation to the Fermi-type Green's function. The results show that the first-order phase transition properties will be changed significantly due to the modification of interchange interaction and transverse field parameters on the epitaxy surface layer. The dependence of the first-order phase transition properties on the thickness of ferroelectric thin films is also discussed.
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Received: 08 June 2010
Revised: 16 July 2010
Accepted manuscript online:
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Fund: Project supported partly by the Foundation for Innovative Research Groups of the National Natural Science Foundation of China (Grant No. 60721001). |
Cite this article:
Lu Zhao-Xin(卢兆信), Teng Bao-Hua(滕保华), Yang Xin(杨新), Rong Yong-Hui(戎永辉), and Zhang Huai-Wu(张怀武) Epitaxy surface effect on the first-order phase transition properties in a ferroelectric thin film 2010 Chin. Phys. B 19 127701
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