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Chin. Phys. B, 2010, Vol. 19(10): 107104    DOI: 10.1088/1674-1056/19/10/107104
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Trends in the band-gap pressure coefficients and bulk moduli in different structures of ZnGa2S4, ZnGa2Se4 and ZnGa2Te4

Jiang Xiao-Shu(姜晓庶), Yan Ying-Ce(闫映策), Yuan Shi-Min(原世民), Mi Shu(米庶), Niu Zhen-Guo(牛振国), and Liang Jiu-Qing(梁九卿)
Department of Physics, Shanxi University, Taiyuan 030006, China
Abstract  We have performed a first-principles investigation for the family of compounds ZnGa2X4 (X= S, Se, Te). The properties of two possible structures, defect chalcopyrite and defect famatinite are both calculated. We reveal that ZnGa2S4 and ZnGa2Se4 have direct band gaps, while ZnGa2Te4 has an indirect band gap. The local density approximation band gaps are found to be very different in two structures, while the lattice parameters and bulk moduli are similar. We extend Cohen's empirical formula for zinc-blende compounds to this family of compounds. The pressure coefficients are calculated and metallization pressures are discussed. We find that agi remains fairly constant when the group-VI element X is varied in ZnGa2X4(II–III2–VI4).
Keywords:  electronic structure      bulk modulus      pressure coefficient  
Received:  06 April 2010      Revised:  29 April 2010      Accepted manuscript online: 
PACS:  61.66.Fn (Inorganic compounds)  
  62.20.D- (Elasticity)  
  62.50.-p (High-pressure effects in solids and liquids)  
  71.15.Mb (Density functional theory, local density approximation, gradient and other corrections)  
  71.20.Nr (Semiconductor compounds)  
  81.40.Jj (Elasticity and anelasticity, stress-strain relations)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No. 10604040), Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Mininstry, the Youth Scientific Research Foundation of Shanxi Province (Grant No. 2007021002) and the Oversea Science Foundation of Shanxi Province.

Cite this article: 

Jiang Xiao-Shu(姜晓庶), Yan Ying-Ce(闫映策), Yuan Shi-Min(原世民), Mi Shu(米庶), Niu Zhen-Guo(牛振国), and Liang Jiu-Qing(梁九卿) Trends in the band-gap pressure coefficients and bulk moduli in different structures of ZnGa2S4, ZnGa2Se4 and ZnGa2Te4 2010 Chin. Phys. B 19 107104

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