Modeling of 4H–SiC multi-floating-junction Schottky barrier diode

doi:10.1088/1674-1056/19/10/107101

Abstract This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H–SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 m$\Omega$·cm² and breakdown voltage increases 422 V with an additional floating junction for the given structure.

Keywords: silicon carbide multi floating junction Schottky barrier diode

Received: 28 October 2009
Revised: 19 January 2010
Accepted manuscript online:

PACS:	61.72.S-	(Impurities in crystals)
	73.21.Ac	(Multilayers)
	73.30.+y	(Surface double layers, Schottky barriers, and work functions)
	85.30.Kk	(Junction diodes)

Fund: Project supported by the Open Fund of Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, Ministry of Education of China.

Cite this article:

Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), Chen Zhi-Ming(陈治明), Ren Jie(仁杰), and Nan Ya-Gong(南雅公) Modeling of 4H–SiC multi-floating-junction Schottky barrier diode 2010 Chin. Phys. B 19 107101

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Modeling of 4H–SiC multi-floating-junction Schottky barrier diode

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