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Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films |
Zhu Zhi-Li(朱志立), Ding Yan-Li(丁艳丽), Wang Zhi-Yong(王志永), Gu Jin-Hua(谷锦华)†, and Lu Jing-Xiao(卢景霄) |
School of Physical Engineering and Material Physics Laboratory, Zhengzhou University, Zhengzhou 450052, China |
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Abstract The scaling behaviour of surface roughness evolution of microcrystalline silicon (μc-Si:H) films prepared by very-high frequency plasma-enhanced chemical vapour deposition (VHF-PECVD) has been investigated by using a spectroscopic ellipsometry (SE) technique. The growth exponent β was analysed for the films deposited under different pressures Pg. The results suggest that films deposited at Pg = 70 Pa have a growth exponent β about 0.22, which corresponds to the definite diffusion growth. However, abnormal scaling behaviour occurs in the films deposited at Pg = 300 Pa. The exponent β is about 0.81 that is much larger than 0.5 of zero diffusion limit in the scaling theory. The growth mode of μ c-Si:H deposited at Pg= 300 Pa is clearly different from that of μc-Si:H at Pg = 70 Pa. Monte Carlo simulations indicate that the sticking process and the surface diffusion of the radicals are two key factors to affect the growth mode under different pressures. Under Pg= 300 Pa, β>0.5 is correlated with the strong shadowing effect resulting from the larger sticking coefficient.
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Received: 27 September 2009
Revised: 19 April 2010
Accepted manuscript online:
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PACS:
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52.77.Dq
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(Plasma-based ion implantation and deposition)
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68.35.B-
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(Structure of clean surfaces (and surface reconstruction))
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68.35.Fx
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(Diffusion; interface formation)
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68.55.-a
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(Thin film structure and morphology)
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78.30.Am
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(Elemental semiconductors and insulators)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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Fund: Project supported by the National Key Basic Research Program of China (Grant No. 2006CB202601) and the Natural Science Foundation of Henan Province of China (Grant No. 82300443203). |
Cite this article:
Zhu Zhi-Li(朱志立), Ding Yan-Li(丁艳丽), Wang Zhi-Yong(王志永), Gu Jin-Hua(谷锦华), and Lu Jing-Xiao(卢景霄) Deposition pressure effect on the surface roughness scaling of microcrystalline silicon films 2010 Chin. Phys. B 19 106803
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