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Chin. Phys. B, 2009, Vol. 18(1): 275-281    DOI: 10.1088/1674-1056/18/1/044
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

First-principle study of Mg adsorption on Si(111) surfaces

Ying Min-Ju(英敏菊)a)b)c), Zhang Ping(张平)d), and Du Xiao-Long(杜小龙)e)
a The Key Laboratory of Beam Technology and Material Modi¯cation of Ministry of Education, Beijing Normal University, Beijing 100875, China; b College of Nuclear Science and Technology, Beijing Normal University, Beijing 100875, China; c Beijing Radiation Center, Beijing 100875, Chinad Laboratory of Computational Physics, Institute of Applied Physics and Computational Mathematics, Beijing 100088, Chinae Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Abstract  We have carried out first-principle calculations of Mg adsorption on Si(111) surfaces. Different adsorption sites and coverage effects have been considered. We found that the threefold hollow adsorption is energy-favoured in each coverage considered, while for the clean Si(111) surface of metallic feature, we found that 0.25 and 0.5 ML Mg adsorption leads to a semiconducting surface. The results for the electronic behaviour suggest a polarized covalent bonding between the Mg adatom and Si(111) surface.
Keywords:  electronic materials      electronic structure  
Received:  22 April 2008      Revised:  11 September 2008      Accepted manuscript online: 
PACS:  68.43.Bc (Ab initio calculations of adsorbate structure and reactions)  
  68.35.Md (Surface thermodynamics, surface energies)  
  68.43.Fg (Adsorbate structure (binding sites, geometry))  
  73.20.At (Surface states, band structure, electron density of states)  
  73.20.Hb (Impurity and defect levels; energy states of adsorbed species)  

Cite this article: 

Ying Min-Ju(英敏菊), Zhang Ping(张平), and Du Xiao-Long(杜小龙) First-principle study of Mg adsorption on Si(111) surfaces 2009 Chin. Phys. B 18 275

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