A study on the electrical property of HgSe under high pressure
Hao Ai-Min(郝爱民)a)b), Gao Chun-Xiao(高春晓)a)† , Li Ming(李明)a), He Chun-Yuan(贺春元)a), Huang Xiao-Wei(黄晓伟)a), Zhang Dong-Mei(张东梅)a), Yu Cui-Ling(于翠玲)a), Guan Rui(关瑞)a), and Zou Guang-Tian(邹广田)a)
a State Key Laboratory for Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012, China; b Department of Mathematics and Physics, Hebei Normal University of Science & Technology, Qinhuangdao 066004, China
Abstract Using a microcircuit fabricated on a diamond anvil cell, we have measured in-situ conductivity of HgSe under high pressures, and investigated the temperature dependence of conductivity under several different pressures. The result shows that HgSe has a pressure-induced transition sequence from a semimetal to a semiconductor to a metal, similar to that in HgTe. Several discontinuous changes in conductivity are observed at around 1.5, 17, 29 and 49GPa, corresponding to the phase transitions from zinc-blende to cinnabar to rocksalt to orthorhombic to an unknown structure, respectively. In comparison with HgTe, it is speculated that the unknown structure may be a distorted CsCl structure. For the cinnabar-HgSe, the energy gap as a function of pressure is obtained according to the temperature dependence of conductivity. The plot of the temperature dependence of conductivity indicates that the unknown structure of HgSe has an electrical property of a conductor.
Received: 10 August 2006
Revised: 18 September 2006
Accepted manuscript online:
PACS:
72.20.-i
(Conductivity phenomena in semiconductors and insulators)
Fund: Project supported by the National Natural Science
Foundation of China (Grant Nos~40473034, 40404007, 10574055 and 50532020)
and by the State Key Development Program for Basic Research of China (Grant
No~2005CB724404).
Cite this article:
Hao Ai-Min(郝爱民), Gao Chun-Xiao(高春晓), Li Ming(李明), He Chun-Yuan(贺春元), Huang Xiao-Wei(黄晓伟), Zhang Dong-Mei(张东梅), Yu Cui-Ling(于翠玲), Guan Rui(关瑞), and Zou Guang-Tian(邹广田) A study on the electrical property of HgSe under high pressure 2007 Chinese Physics 16 2087
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