Abstract This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasma-enhanced chemical vapour deposition (PECVD) for the application of transparent barrier packaging. The variations of O2/ Tetramethyldisiloxane (TMDSO) ratio and input power in radio frequency (RF) plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate (WVTR), oxygen transmission rate (OTR), and atomic force microscopy analysers. It is found that the O2/TMDSO ratio exceeding 2:1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier (WVTR and OTR) properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.
Received: 26 May 2006
Revised: 30 October 2006
Accepted manuscript online:
Fund: Project supported by the Beijing Education
Funds (Grant No KW20050001), the Talent Funds of Beijing Institute of
Graphic Communication and Funding Project for Academic Human
Resources Development in Institutions of Higher Learning Under the
Jurisdiction o
Cite this article:
Zhou Mei-Li(周美丽), Fu Ya-Bo(付亚波), Chen Qiang(陈强), and Ge Yuan-Jing(葛袁静） Deposition of SiOx barrier films by O2/TMDSO RF-PECVD 2007 Chinese Physics 16 1101
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