PHYSICS OF GASES, PLASMAS, AND ELECTRIC DISCHARGES |
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Synthesis of ZrSiN composite films using a plasma focus device |
R. Ahmada, T. Hussaina, I. A. Khanb, R. S. Rawatc |
a Center for Advanced Studies in Physics, GC University, 54000 Lahore, Pakistan; b Physics Department, GC University Faisalabad, Pakistan; c National Institute of Education, Nanyang Technological University, Singapore 637616, Singapore |
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Abstract ZrSiN thin films are synthesized by using plasma focus through various numbers of focus shots (10, 20, and 30), with samples placed at 9 cm away from the tip of the anode. Crystal structures, surface morphologies, and elemental compositions of ZrSiN films are characterized by an X-ray diffractometer (XRD) and scanning electron microscope (SEM) attached with energy dispersive X-ray spectroscopy (EDS). XRD patterns confirm the formations of polycrystalline ZrSiN films. Crystallinity of nitride increases with the increase of focus shot number. The average crystallite size of zirconium nitride increases from 27 ± 3 nm to 73 ± 8 nm and microstrain decreases from 2.28 to 1.0 with the increase of the focus shot number. SEM results exhibit the formations of granular and oval-shaped microstructures, depending on the number of focus shots. EDS results confirm the presences of silicon, zirconium, nitrogen, and oxygen in the composite films. The content values of Zr and N in the composite films increase with the increase of the focus shot number.
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Received: 01 November 2013
Revised: 03 December 2013
Accepted manuscript online:
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PACS:
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52.59.Hq
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(Dense plasma focus)
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52.77.Dq
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(Plasma-based ion implantation and deposition)
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61.05.cp
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(X-ray diffraction)
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68.37.Hk
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(Scanning electron microscopy (SEM) (including EBIC))
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Fund: Project supported by the National Project for Research for University, the Higher Education Commission (HEC), Pakistan. |
Corresponding Authors:
T. Hussain
E-mail: tousifhussain@gcu.edu.pk
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Cite this article:
R. Ahmad, T. Hussain, I. A. Khan, R. S. Rawat Synthesis of ZrSiN composite films using a plasma focus device 2014 Chin. Phys. B 23 065204
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