Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

doi:10.1088/1674-1056/26/1/015203

Abstract We report nonlinear parametric interactions using a hydrodynamic model of ion-implanted semiconductor plasmas having strain-dependent dielectric constants (SDDC). High-dielectric-constant materials are technologically important because of their nonlinear properties. We find that the third-order susceptibility varies in the range 10^-14-10^-12 m²·V^-2 for ion-implanted semiconductor plasmas, which is in good agreement with previous results. It is found that the presence of SDDC in ion-implanted semiconductor plasma modifies the characteristic properties of the material.

Keywords: nonlinear parametric interactions ion-implanted semiconductor plasmas strain-dependent dielectric constant

Received: 20 August 2016
Revised: 27 September 2016
Accepted manuscript online:

PACS:	52.35.Mw	(Nonlinear phenomena: waves, wave propagation, and other interactions (including parametric effects, mode coupling, ponderomotive effects, etc.))
	52.77.Dq	(Plasma-based ion implantation and deposition)
	77.84.-s	(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)

Corresponding Authors: P S Malviya
E-mail: psm_sehore@rediffmail.com

Cite this article:

N Yadav, S Ghosh, P S Malviya Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants 2017 Chin. Phys. B 26 015203

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Nonlinear parametric interactions in ion-implanted semiconductor plasmas having strain-dependent dielectric constants

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