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Chinese Physics, 2007, Vol. 16(12): 3754-3759    DOI: 10.1088/1009-1963/16/12/033

New CMOS compatible super junction LDMOST with n-type buried layer

Duan Bao-Xing(段宝兴)a)† , Zhang Bo(张波)b), and Li Zhao-Ji(李肇基)b)
a Microelectronics Institute, Xidian University, Xi'an 710071, China; b State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract  A new super-junction lateral double diffused MOSFET (LDMOST) structure is designed with n-type charge compensation layer embedded in the p$^{ - }$-substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p$^{ - }$-substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field (REBULF) is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain. The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.
Keywords:  super-junction      LDMOST      n-type buried layer      REBULF      breakdown voltage  
Accepted manuscript online: 
PACS:  85.30.Tv (Field effect devices)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
  73.50.Fq (High-field and nonlinear effects)  
Fund: Project supported by the National Natural Science Foundation of China (Grant No~60436030) and the Key Laboratory for Defence Science and Technology on Military Simulation Integrated Circuits (Grant No~9140C0903010604).

Cite this article: 

Duan Bao-Xing(段宝兴), Zhang Bo(张波), and Li Zhao-Ji(李肇基) New CMOS compatible super junction LDMOST with n-type buried layer 2007 Chinese Physics 16 3754

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