Electrical and structural properties of diamond films implanted by various doses of oxygen ions
Hu Xiao-Jun(胡晓君)a)†, Ye Jian-Song(叶健松)b), Zheng Guo-Qu(郑国渠)a), Cao Hua-Zhen(曹华珍)a), and Tan Hong-Chuan(谭红川)a)
a College of Chemical Engineering and Material Science,Zhejiang University of Technology, Hangzhou 310014, China; b Hangzhou Iron and Steel Group Corporation, Hangzhou 310022, China
Abstract Oxygen-doped diamond films are prepared by implanting various dose oxygen ions into the diamond films synthesized by hot filament chemical vapour deposition, and their electrical and structural properties are investigated. Hall effect measurements show that lower dose oxygen ion implantation is beneficial to preparing n-type diamonds. The carrier concentration increases with the dose increasing, indicating that oxygen ions supply electrons to the diamonds. The results of AES spectrum indicate that oxygen ions are doped into the diamond films, and the O-implanted depth is around 0.1μm. Raman spectrum measurements indicate that the lower dose oxygen ion implantation at 1014cm-2 or 1015cm-2 is favourable for producing less damaged O-doped diamond films.
Received: 14 January 2006
Revised: 02 June 2006
Accepted manuscript online:
PACS:
65.60.+a
(Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.)
Fund: Project supported by the
Research Foundation of Education Bureau of Zhejiang province, China
(Grant No 20050227).
Cite this article:
Hu Xiao-Jun(胡晓君), Ye Jian-Song(叶健松), Zheng Guo-Qu(郑国渠), Cao Hua-Zhen(曹华珍), and Tan Hong-Chuan(谭红川) Electrical and structural properties of diamond films implanted by various doses of oxygen ions 2006 Chinese Physics 15 2170
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