Scanning tunnelling microscope studies of growth of RuO2(110) thin layer on Ru(0001)

doi:10.1088/1009-1963/15/8/044

Abstract

Abstract This paper reports that the growth of RuO₂(110) thin layer growth on Ru(0001) has been investigated by means of scanning tunnelling microscope (STM). The STM images showed a domain structure with three rotational domains of RuO₂(110) rotated by an angle of 120℃. The as-grown RuO₂(110) thin layer is expanded from the bulk-truncated RuO₂(110) due to the large mismatch between RuO₂(110) and the Ru(0001) substrate. The results also indicate that growth of RuO₂(110) thin layer on the Ru(0001) substrate by oxidation tends first to formation of the Ru-O (oxygen) chains in the [001] direction of RuO₂(110).

Keywords: ruthenium oxide growth scanning tunnelling microscope

Received: 07 July 2005
Revised: 13 April 2006
Accepted manuscript online:

PACS:	68.37.Ef	(Scanning tunneling microscopy (including chemistry induced with STM))
	68.55.-a	(Thin film structure and morphology)
	68.37.Ps	(Atomic force microscopy (AFM))
	68.47.Gh	(Oxide surfaces)
	07.79.Cz	(Scanning tunneling microscopes)

Fund: Project supported by the National Natural Science Foundation of China (Grant No 10274072), and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20030335017).

Cite this article:

Zhang Han-Jie(张寒洁), Lü Bin(吕斌), Lu Yun-Hao(陆赟豪), Huang Han(黄寒), Li Hai-Yang(李海洋), Bao Shi-Ning(鲍世宁), and He Pei-Mo(何丕模) Scanning tunnelling microscope studies of growth of RuO₂(110) thin layer on Ru(0001) 2006 Chinese Physics 15 1892

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Scanning tunnelling microscope studies of growth of RuO2(110) thin layer on Ru(0001)

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Scanning tunnelling microscope studies of growth of RuO₂(110) thin layer on Ru(0001)