Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer
Chen Wei-Bing(陈卫兵)a)†, Xu Jing-Ping(徐静平)a), Lai Pui-To(黎沛涛)b), Li Yan-Ping(李艳萍)a), Xu Sheng-Guo(许胜国)a), and Chan Chu-Lok(陈铸略)b)
a Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China; b Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Road, Hong Kong, China
Abstract The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O2 ambience, followed by an annealing in different gas ambiences of N2, NO and NH3 at 600℃ for 2 min. Capacitance--voltage and gate-leakage properties are characterized and compared. The results indicate that the NO-annealed sample exhibits the lowest interface-state and dielectric-charge densities and best device reliability. This is attributed to the fact that nitridation can create strong Si $\equiv $ N bonds to passivate dangling Si bonds and replace strained Si--O bonds, thus the sample forms a hardened dielectric/Si interface with high reliability.
Received: 09 March 2006
Revised: 17 May 2006
Accepted manuscript online:
(Semiconductor-device characterization, design, and modeling)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 60376019).
Cite this article:
Chen Wei-Bing(陈卫兵), Xu Jing-Ping(徐静平), Lai Pui-To(黎沛涛), Li Yan-Ping(李艳萍), Xu Sheng-Guo(许胜国), and Chan Chu-Lok(陈铸略) Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer 2006 Chinese Physics 15 1879
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