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Chinese Physics, 2004, Vol. 13(7): 1120-1123    DOI: 10.1088/1009-1963/13/7/027
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Anisotropy of the upper critical field in c-axis oriented MgB2 thin films

Wang Shu-Fang (王淑芳)ab, Liu Zhen (刘震)a, Zhu Ya-Bin (朱亚彬)a, Zhou Yue-Liang (周岳亮)a, Chen Zheng-Hao (陈正豪)a, Lü Hui-Bin (吕惠宾)a, Yang Guo-Zhen (杨国桢)a
a Laboratory of Optical Physics, Institute of Physics & Centre of Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100080, China; b Physics & Technology College, Hebei University, Baoding 071002, China
Abstract  C-axis oriented MgB$_2$ thin films were synthesized on single-crystal MgO (111) substrates using a chemical vapour deposition technique. The as-formed films revealed a sharp superconducting transition temperature of 38K with the transition width 0.2K. The temperature dependence of the upper critical magnetic field $H_{c2}(T)$ in the films was determined via resistivity for magnetic field H parallel and perpendicular to the c axis of the films. Using the Werthamer-Helfand-Hohenberg formula, we obtained the anisotropy ratio of the upper critical field $\gamma$=1.2.
Keywords:  MgB2 thin films      anisotropy      upper critical field      chemical vapour deposition  
Received:  08 October 2003      Revised:  09 December 2003      Accepted manuscript online: 
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  74.62.Bf (Effects of material synthesis, crystal structure, and chemical composition)  
  75.30.Gw (Magnetic anisotropy)  
  74.78.Bz  
Fund: Project supported by the State Key Programme for Basic Research of China (Grant No 1999064604).

Cite this article: 

Wang Shu-Fang (王淑芳), Liu Zhen (刘震), Zhu Ya-Bin (朱亚彬), Zhou Yue-Liang (周岳亮), Chen Zheng-Hao (陈正豪), Lü Hui-Bin (吕惠宾), Yang Guo-Zhen (杨国桢) Anisotropy of the upper critical field in c-axis oriented MgB2 thin films 2004 Chinese Physics 13 1120

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