AbstractThe behaviour of electrons in CH$_{4}$/H$_{2}$ gas mixture in electron-assisted chemical vapour deposition of diamond is investigated using Monte Carlo simulation. The electron drift velocity in gas mixture is obtained over a wide range of E/P (the ratio of the electric field to gas pressure) from 1500 to 300000 (V/m kPa$^{-1}$). The electron energy distribution and average energy under different gas pressure (0.1－20kPa) and CH$_{4}$ concentration (0.5%－10.0%) are calculated. Their effects on the diamond growth are also discussed. It is believed that these results will be helpful to the selection of optimum experimental conditions for high quality diamond film deposition.
Received: 14 January 2004
Revised: 10 March 2004
Accepted manuscript online:
Fund: Project supported by the Natural Science Foundation of Hebei Province, China (Grant No 502121).
Cite this article:
Dong Li-Fang (董丽芳), Ma Bo-Qin (马博琴), Wang Zhi-Jun (王志军) Electron behaviour in CH4/H2 gas mixture in electron-assisted chemical vapour deposition 2004 Chinese Physics 13 1597
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