Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film
Chen Chang-Yong (陈长勇)a, Chen Wei-De (陈维德)a, Li Guo-Hua (李国华)b, Song Shu-Fang (宋淑芳)a, Ding Kun (丁琨)b, Xu Zhen-Jia (许振嘉)a
a State Laboratory for Surface Physics, Institute of Semiconductors and Centre for Condensed Matter Physics, Chinese Academy of Science, Beijing 100083, China; b National Laboratory for Superlattices and Microstructures and Institute of semiconductors, Chinese Academy of Science, Beijing 100083, China
Abstract An investigation on the correlation between amorphous Si (a-Si) domains and Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H<Er>) film is presented. On one hand, a-Si domains provide sufficient carriers for Er3+carrier-mediated excitation which has been proved to be the highest excitation path for Er3+ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiOx) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er3+ions. This study provides a better understanding of the role of a-Si domains on Er3+emission in a-Si:O:Hfilms.
Received: 26 August 2002
Revised: 18 December 2002
Accepted manuscript online:
PACS:
78.55.Qr
(Amorphous materials; glasses and other disordered solids)
Fund: Project supported by the National Natural Science Foundation of China (Grant No 69976028).
Cite this article:
Chen Chang-Yong (陈长勇), Chen Wei-De (陈维德), Li Guo-Hua (李国华), Song Shu-Fang (宋淑芳), Ding Kun (丁琨), Xu Zhen-Jia (许振嘉) Role of amorphous silicon domains on Er3+ emission in the Er-doped hydrogenated amorphous silicon suboxide film 2003 Chinese Physics 12 438
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