State Key Laboratory for Surface Physics, Institute of Semiconductors and Centre for Condensed Matter Physics, Chinese Academy of Sciences, Beijing 100083, China
Abstract A novel pulsed rapid thermal processing (PRTP) method has been used for realizing solid-phase crystallization of amorphous silicon films prepared by plasma-enhanced chemical vapour deposition. The microstructure and surface morphology of the crystallized films were investigated using x-ray diffraction and atomic force microscopy. The results indicate that PRTP is a suitable post-crystallization technique for fabricating large-area polycrystalline silicon films with good structural quality, such as large grain size, small lattice microstrain and smooth surface morphology on low-cost glass substrates.
Received: 27 June 2001
Revised: 17 November 2001
Accepted manuscript online:
Fund: Project supported by the National Natural Science Foundation of China (Grant Nos 69976028 and 29890217), and the State Key Development Programme for Basic Research of China (Grant No 2000028201).
Cite this article:
Wang Yong-Qian (王永谦), Liao Xian-Bo (廖显伯), Diao Hong-Wei (刁宏伟), Zhang Shi-Bin (张世斌), Xu Yan-Yue (徐艳月), Chen Chang-Yong (陈长勇), Chen Wei-De (陈维德), Kong Guang-Lin (孔光临) Structural properties of polycrystalline silicon films formed by pulsed rapid thermal processing 2002 Chinese Physics 11 492
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