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Chinese Physics, 2001, Vol. 10(3): 189-193    DOI: 10.1088/1009-1963/10/3/304
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HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS

Ren Hong-xia (任红霞), Hao Yue (郝跃)
Institute of Microelectronics, Xidian University, Xi'an 710071, China
Abstract  Based on the hydrodynamic energy transport model, immunity from the hot-carrier effect in deep-sub-micron grooved-gate p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) is analysed. The results show that hot carriers generated in grooved-gate PMOSFETs are much smaller than those in planar ones, especially for the case of channel lengths lying in the deep-sub-micron and super deep-sub-micron regions. Then, the hot-carrier generation mechanism and the reason why grooved-gate MOS devices can suppress the hot-carrier effect are studied from the viewpoint of physical mechanisms occurring in devices. It is found that the highest hot-carrier generating rate is at a medium gate bias voltage in three stress areas, similar to conventional planar devices. In deep-sub-micron grooved-gate PMOSFETs, the hot-carrier injection gate current is still composed mainly of the hot-electron injection current, and the hole injection current becomes dominant only at an extremely high gate voltage. In order to investigate other influences of the hot-carrier effect on the device characteristics, the degradation of the device performance is studied for both grooved-gate and planar devices at different interface states. The results show that the drift of the device electrical performance induced by the interface states in grooved-gate PMOSFETs is far larger than that in planar devices.
Keywords:  grooved-gate PMOSFETs      mechanism of hot-carrier generation      hot-carrier effect      interface states  
Received:  25 April 2000      Revised:  01 October 2000      Accepted manuscript online: 
PACS:  72.20.Ht (High-field and nonlinear effects)  
  85.30.Tv (Field effect devices)  
  73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))  
Fund: Project supported by the National Defense Pre-Research Foundation of China (Grant No.99J8.1.1.DZD132).

Cite this article: 

Ren Hong-xia (任红霞), Hao Yue (郝跃) HOT-CARRIER GENERATION MECHANISM AND HOT-CARRIER EFFECT IMMUNITY IN DEEP-SUB-MICRON GROOVED-GATE PMOSFETS 2001 Chinese Physics 10 189

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