Please wait a minute...
Acta Physica Sinica (Overseas Edition), 1997, Vol. 6(8): 624-628    DOI: 10.1088/1004-423X/6/8/009
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev  

STIMULATED EMISSION AND GAIN MEASUREMENTS IN InAsP/InP STRAINED-MULTIPLE-QUANTUM WELLS

ZHAO YI-GUANG (赵一广), HUANG XIAN-LING (黄显玲)
Department of Physics, Peking University, Beijing 100871, China; State Key Laboratory for Superlattices and Microstructures, Beijing 100083, China
Abstract  We have studied the stimulated emission from InAsP/InP strained-multiple-quantum wells at room temperature. The stimulated emission spectra weave seen with three lobes, which are E1H and E1L transitions, and a tran-sitions from heavy hole initial states to localized interface states. The E1H transitions exhibited different gain value from that of the transitions between the heavy hole and the interface states. With increasing excitation intensity, the gain of the interface peak appears to be saturated at lower excitation intensity. A method for identifying the inter face peak in the photoluminescene spectrum has been proposed.
Received:  04 July 1996      Revised:  15 November 1996      Accepted manuscript online: 
PACS:  78.45.+h (Stimulated emission)  
  78.67.De (Quantum wells)  
  73.20.At (Surface states, band structure, electron density of states)  
  78.55.Cr (III-V semiconductors)  
  73.21.Fg (Quantum wells)  

Cite this article: 

ZHAO YI-GUANG (赵一广), HUANG XIAN-LING (黄显玲) STIMULATED EMISSION AND GAIN MEASUREMENTS IN InAsP/InP STRAINED-MULTIPLE-QUANTUM WELLS 1997 Acta Physica Sinica (Overseas Edition) 6 624

[1] Synthesis of new silicene structure and its energy band properties
Wei-Qi Huang(黄伟其), Shi-Rong Liu(刘世荣), Hong-Yan Peng(彭鸿雁), Xin Li(李鑫), Zhong-Mei Huang(黄忠梅). Chin. Phys. B, 2020, 29(8): 084202.
[2] Spectral properties of Pr:CNGG crystals grown by micro-pulling-down method
Yan-Yan Xue(薛艳艳), Na Li(李纳), Dong-Hua Hu(胡冬华), Qing-Song Song(宋青松), Xiao-Dong Xu(徐晓东), Dong-Hai Wang(王东海), Qing-Guo Wang(王庆国), Dong-Zhen Li(李东振), Zhan-Shan Wang(王占山), Jun Xu(徐军). Chin. Phys. B, 2019, 28(8): 087801.
[3] Temperature and excitation dependence of stimulated emission and spontaneous emission in InGaN epilayer
Xuee An(安雪娥), Zhengjun Shang(商正君), Chuanhe Ma(马传贺), Xinhe Zheng(郑新和), Cuiling Zhang(张翠玲), Lin Sun(孙琳), Fangyu Yue(越方禹), Bo Li(李波), Ye Chen(陈晔). Chin. Phys. B, 2019, 28(5): 057802.
[4] Spectra properties of Yb3+, Er3+: Sc2SiO5 crystal
Yanyan Xue(薛艳艳), Lihe Zheng(郑丽和), Dapeng Jiang(姜大朋), Qinglin Sai(赛青林), Liangbi Su(苏良碧), Jun Xu(徐军). Chin. Phys. B, 2019, 28(3): 037802.
[5] Mid-infrared luminescence of Dy3+-doped Ga2S3-Sb2S3-CsI chalcohalide glasses
Anping Yang(杨安平), Jiahua Qiu(邱嘉桦), Mingjie Zhang(张鸣杰), Mingyang Sun(孙明阳), Zhiyong Yang(杨志勇). Chin. Phys. B, 2018, 27(7): 077105.
[6] Theoretical study on the lasing plasmon of a split ring for label-free detection of single molecules and single nanoparticles
Chunjie Zheng(郑春杰), Tianqing Jia(贾天卿), Hua Zhao(赵华), Yingjie Xia(夏英杰), Shian Zhang(张诗按), Zhenrong Sun(孙真荣). Chin. Phys. B, 2018, 27(5): 057802.
[7] Influence of fluorescence time characteristics on the spatial resolution of CW-stimulated emission depletion microscopy
Haiyun Qin(秦海芸), Wei Zhao(赵伟), Chen Zhang(张琛), Yong Liu(刘勇), Guiren Wang(王归仁), Kaige Wang(王凯歌). Chin. Phys. B, 2018, 27(3): 037803.
[8] ZnO-based deep-ultraviolet light-emitting devices
Ying-Jie Lu(卢英杰), Zhi-Feng Shi(史志锋), Chong-Xin Shan(单崇新), De-Zhen Shen(申德振). Chin. Phys. B, 2017, 26(4): 047703.
[9] Plasmonic emission and plasma lattice structures induced by pulsed laser in Purcell cavity on silicon
Huang Wei-Qi (黄伟其), Huang Zhong-Mei (黄忠梅), Miao Xin-Jian (苗信建), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建). Chin. Phys. B, 2015, 24(10): 104209.
[10] Plasma induced by pulsed laser and fabrication of silicon nanostructures
Hang Wei-Qi (黄伟其), Dong Tai-Ge (董泰阁), Wang Gang (王刚), Liu Shi-Rong (刘世荣), Huang Zhong-Mei (黄忠梅), Miao Xin-Jian (苗信建), Lv Quan (吕泉), Qin Chao-Jian (秦朝建). Chin. Phys. B, 2015, 24(8): 084205.
[11] Curved surface effect and emission on silicon nanostructures
Huang Wei-Qi (黄伟其), Yin Jun (尹君), Zhou Nian-Jie (周年杰), Huang Zhong-Mei (黄忠梅), Miao Xin-Jian (苗信建), Cheng Han-Qiong (陈汉琼), Su Qin (苏琴), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建). Chin. Phys. B, 2013, 22(10): 104204.
[12] Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits
Wang Min-Shuai (王敏帅), Huang Xiao-Jing (黄晓菁). Chin. Phys. B, 2013, 22(8): 086803.
[13] Electronic states and shape of silicon quantum dots
Huang Wei-Qi (黄伟其), Miao Xing-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Cheng Han-Qiong (陈汉琼), Shu Qin (苏琴). Chin. Phys. B, 2013, 22(6): 064207.
[14] Activation of silicon quantum dots for emission
Huang Wei-Qi (黄伟其), Miao Xin-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建). Chin. Phys. B, 2012, 21(9): 094207.
[15] Effect of different metal-backed waveguides on amplified spontaneous emission
Zhang Bo (张波), Hou Yan-Bing (侯延冰), Lou Zhi-Dong (娄志东), Teng Feng (滕枫), Liu Xiao-Jun (刘小君), Hu Bing (胡兵), Meng Ling-Chuan (孟令川), Wu Wen-Bin (武文彬 ). Chin. Phys. B, 2012, 21(8): 084212.
No Suggested Reading articles found!