ZnO-based deep-ultraviolet light-emitting devices

doi:10.1088/1674-1056/26/4/047703

Abstract

Deep-ultraviolet (DUV) light-emitting devices (LEDs) have a variety of potential applications. Zinc-oxide-based materials, which have wide bandgap and large exciton binding energy, have potential applications in high-performance DUV LEDs. To realize such optoelectronic devices, the modulation of the bandgap is required. This has been demonstrated by the developments of Mg_xZn_1-xO and Be_xZn_1-xO alloys for the larger bandgap materials. Many efforts have been made to obtain DUV LEDs, and promising successes have been achieved continuously. In this article, we review the recent progress of and problems encountered in the research of ZnO-based DUV LEDs.

Keywords: ZnO deep-ultraviolet light-emitting devices Mg_xZn_1-xO Be_xZn_1-xO

Received: 22 October 2016
Revised: 27 November 2016
Accepted manuscript online:

PACS:	77.55.hf	(ZnO)
	78.45.+h	(Stimulated emission)
	78.60.Fi	(Electroluminescence)
	85.60.Jb	(Light-emitting devices)

Fund:

Project supported by the National Natural Science Foundation for Distinguished Young Scholars of China (Grant No. 61425021) and the Natural Natural Science Foundation of China (Grant Nos. 11374296, 61376054, 61475153, and 61604132).

Corresponding Authors: Chong-Xin Shan
E-mail: shancx@ciomp.ac.cn

Cite this article:

Ying-Jie Lu(卢英杰), Zhi-Feng Shi(史志锋), Chong-Xin Shan(单崇新), De-Zhen Shen(申德振) ZnO-based deep-ultraviolet light-emitting devices 2017 Chin. Phys. B 26 047703

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ZnO-based deep-ultraviolet light-emitting devices

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