Curved surface effect and emission on silicon nanostructures

doi:10.1088/1674-1056/22/10/104204

Abstract The curved surface (CS) effect on nanosilicon plays a main role in the activation for emission and photonic manipulation. The CS effect breaks the symmetrical shape of nanosilicon on which some bonds can produce localized electron states in the band gap. The investigation in calculation and experiment demonstrates that the different curvatures can form the characteristic electron states for some special bonding on the nanosilicon surface, which are related to a series of peaks in photoluminecience (PL), such as L_N, L_NO, L_O1, and L_O2 lines in PL spectra due to Si–N, Si–NO, Si=O, and Si–O–Si bonds on curved surface, respectively. Si–Yb bond on curved surface of Si nanostructures can provide the localized states in the band gap deeply and manipulate the emission wavelength into the window of optical communication by the CS effect, which is marked as the L_Yb line of electroluminescence (EL) emission.

Keywords: silicon nanostructures curved surface effect characteristic line localized states

Received: 16 March 2013
Revised: 30 March 2013
Accepted manuscript online:

PACS:	42.55.-f	(Lasers)
	68.65.Hb	(Quantum dots (patterned in quantum wells))
	78.45.+h	(Stimulated emission)
	78.55.Mb	(Porous materials)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 11264007).

Corresponding Authors: Huang Wei-Qi
E-mail: sci.wqhuang@gzu.edu.cn

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Huang Wei-Qi (黄伟其), Yin Jun (尹君), Zhou Nian-Jie (周年杰), Huang Zhong-Mei (黄忠梅), Miao Xin-Jian (苗信建), Cheng Han-Qiong (陈汉琼), Su Qin (苏琴), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建) Curved surface effect and emission on silicon nanostructures 2013 Chin. Phys. B 22 104204

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