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Activation of silicon quantum dots for emission |
| Huang Wei-Qi (黄伟其)a, Miao Xin-Jian (苗信建)a, Huang Zhong-Mei (黄忠梅)a, Liu Shi-Rong (刘世荣)b, Qin Chao-Jian (秦朝建)b |
a Key Laboratory of Photoelectron Technology and Application, Institute of Nanophotonic Physics, Guizhou University, Guiyang 550025, China;
b State Key Laboratory of Ore Deposit Geochemistry, Institute of Geochemistry, Chinese academy of Sciences, Guiyang 550003, China |
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Abstract Emission of silicon quantum dots is weak when their surface is passivated well. Oxygen or nitrogen on surface of silicon quantum dots can break the passivation to form localized electronic states in band gap to generate active centers where stronger emission occurs. From this point of view, we can build up radiative matters for emission. By controlling the surface bonds of silicon quantum dots, emissions of various wavelengths can be obtained. Our experimental results demonstrate that annealing is important in treatment of the activation, and stimulated emissions at about 600 and 700 nm take place on active silicon quantum dots.
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Received: 28 January 2012
Revised: 22 February 2012
Accepted manuscript online:
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PACS:
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42.55.-f
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(Lasers)
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68.65.Hb
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(Quantum dots (patterned in quantum wells))
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78.45.+h
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(Stimulated emission)
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78.55.Mb
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(Porous materials)
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| Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60966002) and the National Key Laboratory of Surface Physics, Fudan University, China. |
Corresponding Authors:
Huang Wei-Qi, Liu Shi-Rong
E-mail: WQHuang2001@yahoo.com; Shirong@yahoo.com
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Cite this article:
Huang Wei-Qi (黄伟其), Miao Xin-Jian (苗信建), Huang Zhong-Mei (黄忠梅), Liu Shi-Rong (刘世荣), Qin Chao-Jian (秦朝建) Activation of silicon quantum dots for emission 2012 Chin. Phys. B 21 094207
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