Abstract The effects of Pb doping, oxygen doping ($\delta$= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg0.8Pb0.2Ba2Ca2Cu3O8+$\delta$ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as $\delta$ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO2 layers. The optimal $\delta$ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed Tc(P) by Pb substitution has to be described in the modified Neumeier's model.
Received: 27 October 1995
Accepted manuscript online:
Fund: Project supported by the National Education Foundation of China for Ph. D., the Computer Center of Peking University and the Beijing Institute of Modern Physics (BIMP) Computing Center of Peking University.
Cite this article:
Lü JING (吕劲), ZHANG LI-YUAN (章立源), HAO XUE-JUN (郝学军) ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+$\delta$: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE 1997 Acta Physica Sinica (Overseas Edition) 6 40
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