Please wait a minute...
Chin. Phys. B, 2020, Vol. 29(2): 028101    DOI: 10.1088/1674-1056/ab6586
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Prev   Next  

Atomically flat surface preparation for surface-sensitive technologies

Cen-Yao Tang(唐岑瑶)1,2, Zhi-Cheng Rao(饶志成)1,2, Qian-Qian Yuan(袁茜茜)3,4, Shang-Jie Tian(田尚杰)5, Hang Li(李航)1,2, Yao-Bo Huang(黄耀波)6, He-Chang Lei(雷和畅)5, Shao-Chun Li(李绍春)3,4, Tian Qian(钱天)1,7, Yu-Jie Sun(孙煜杰)1,7, Hong Ding(丁洪)1,7
1 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
2 University of Chinese Academy of Sciences, Beijing 100049, China;
3 National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing 210093, China;
4 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
5 Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing 100872, China;
6 Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China;
7 Songshan Lake Materials Laboratory, Dongguan 250100, China
Abstract  Surface-sensitive measurements are crucial to many types of researches in condensed matter physics. However, it is difficult to obtain atomically flat surfaces of many single crystals by the commonly used mechanical cleavage. We demonstrate that the grind-polish-sputter-anneal method can be used to obtain atomically flat surfaces on topological materials. Three types of surface-sensitive measurements are performed on CoSi (001) surface with dramatically improved quality of data. This method extends the research area of surface-sensitive measurements to hard-to-cleave alloys, and can be applied to irregular single crystals with selective crystalline planes. It may become a routine process of preparing atomically flat surfaces for surface-sensitive technologies.
Keywords:  grind-polish-sputter-anneal      atomically flat      single crystal surface      topological materials  
Received:  18 November 2019      Revised:  17 December 2019      Accepted manuscript online: 
PACS:  81.65.Cf (Surface cleaning, etching, patterning)  
  61.72.Cc (Kinetics of defect formation and annealing)  
  74.25.Jb (Electronic structure (photoemission, etc.))  
  68.37.-d (Microscopy of surfaces, interfaces, and thin films)  
Fund: Project supported by the Science Fund from the Ministry of Science and Technology of China (Grant Nos. 2016YFA0401000, 2016YFA0300600, 2016YFA0302400, 2016YFA0300504, and 2017YFA0302901), the National Natural Science Foundation of China (Grant Nos. 11622435, U1832202, 11474340, 11822412, 11574371, 11674369, 11574394, 11774423, and 11774399), the Fund from the Chinese Academy of Sciences (Grant Nos. QYZDB-SSW-SLH043, XDB07000000, and XDB28000000), the Science Challenge Project, China (Grant No. TZ2016004), the K C Wong Education Foundation, China (Grant No. GJTD-2018-01), the Beijing Natural Science Foundation, China (Grant No. Z180008), the Fund from the Beijing Municipal Science and Technology Commission, China (Grant Nos. Z171100002017018, Z181100004218005, and Z181100004218001), the Fundamental Research Funds for the Central Universities, China, and the Research Funds of Renmin University of China (Grant Nos. 15XNLQ07, 18XNLG14, and 19XNLG17).
Corresponding Authors:  Yu-Jie Sun     E-mail:  yjsun@iphy.ac.cn

Cite this article: 

Cen-Yao Tang(唐岑瑶), Zhi-Cheng Rao(饶志成), Qian-Qian Yuan(袁茜茜), Shang-Jie Tian(田尚杰), Hang Li(李航), Yao-Bo Huang(黄耀波), He-Chang Lei(雷和畅), Shao-Chun Li(李绍春), Tian Qian(钱天), Yu-Jie Sun(孙煜杰), Hong Ding(丁洪) Atomically flat surface preparation for surface-sensitive technologies 2020 Chin. Phys. B 29 028101

[1] Binnig G, Rohrer H, Gerber C and Weibel E 1982 Phys. Rev. Lett. 49 57
[2] Neave J, Dobson P, Joyce B and Zhang J 1985 Appl. Phys. Lett. 47 100
[3] Damascelli A, Hussain Z and Shen Z X 2003 Rev. Mod. Phys. 75 473
[4] Ding H, Yokoya T, Campuzano J C, Takahashi T, Randeria M, Norman M, Mochiku T, Kadowaki K and Giapintzakis J 1996 Nature 382 51
[5] Duke C B and Wang Y J 1988 J. Vac. Sci. Technol. B 6 1440
[6] Seah M P 1981 Thin Solid Films 81 279
[7] Li J, Stein D, McMullan C, Branton D, Aziz M J and Golovchenko J A 2001 Nature 412 166
[8] Giannuzzi L A 2004 Introduction to focused ion beams: instrumentation, theory, techniques and practice (Springer Science & Business Media) pp. 229-248
[9] Andersen H H, Bay H L, Behrisch R, Robinson M T, Roosendaal H E and Sigmund P 1981 Sputtering by particle bombardment I (Springer) pp. 145-218
[10] Tamai A, Meevasana W, King P D C, Nicholson C W, de La Torre A, Rozbicki E and Baumberger F 2013 Phys. Rev. B 87 075113
[11] Castro G R, Küppers J and Ivashchenko Y 1983 Appl. Surf. Sci. 16 453
[12] Fu L and Kane C L 2007 Phys. Rev. B 76 045302
[13] Fu L, Kane C L and Mele E J 2007 Phys. Rev. Lett. 98 106803
[14] Takane D, Wang Z, Souma S, Nakayama K, Nakamura T, Oinuma H, Nakata Y, Iwasawa H, Cacho C, Kim T, Horiba K, Kumigashira H, Takahashi T, Ando Y and Sato T 2019 Phys. Rev. Lett. 122 076402
[15] Sanchez D S, Belopolski I, Cochran T A, et al. 2019 Nature 567 500
[16] Rao Z, Li H, Zhang T, Tian S, Li C, Fu B, Tang C, Wang L, Li Z and Fan W 2019 Nature 567 496
[17] Tang P, Zhou Q and Zhang S C 2017 Phys. Rev. Lett. 119 206402
[18] Bradlyn B, Cano J, Wang Z, Vergniory M, Felser C, Cava R J and Bernevig B A 2016 Science 353 aaf5037
[19] Chang G, Xu S Y, Wieder B J, Sanchez D S, Huang S M, Belopolski I, Chang T R, Zhang S, Bansil A, Lin H and Hasan M Z 2017 Phys. Rev. Lett. 119 206401
[1] Chemisorption of Fe on Au-passivated Si(001) surface
Wei Shu-Yi (危书义), Wang Jian-Guang (汪建广), Ma Li (马丽), Xia Cong-Xin (夏从新), Yan Yu-Li (闫玉丽). Chin. Phys. B, 2004, 13(6): 932-937.
[2] Chemisorption of Au on Si(001) surface
Wei Shu-Yi (危书义), Wang Jian-Guang (汪建广), Ma Li (马丽). Chin. Phys. B, 2004, 13(1): 85-89.
No Suggested Reading articles found!