STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe

doi:10.1088/1004-423X/5/5/007

Abstract

Abstract HgCdTe epilayers were grown by molecular beam epitaxy on GaAs(211)B substrates. Process of the HgCdTe epitaxial growth can be monitored by reflection high-energy electron diffraction. Results of the infrared transmission spectrum, Raman scattering spectrum and infrared photoluminescence spectrum in magnetic field have been studied.

Received: 09 December 1994
Revised: 01 December 1995
Accepted manuscript online:

PACS:	81.15.Hi	(Molecular, atomic, ion, and chemical beam epitaxy)
	68.55.A-	(Nucleation and growth)
	61.05.jh	(Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED))
	78.30.Fs	(III-V and II-VI semiconductors)
	78.55.Et	(II-VI semiconductors)
	78.66.Hf	(II-VI semiconductors)

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GUO SHI-PING (郭世平), ZHANG JIA-MING (张家明), LIU PU-LIN (刘普霖), SHEN XUE-CHU (沈学础), YUAN SHI-XIN (袁诗鑫), J.W. TOMM STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe 1996 Acta Physica Sinica (Overseas Edition) 5 370

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STUDY OF MOLECULAR BEAM EPITAXIAL GROWTH AND OPTICAL CHARACTERISTICS OF HgCdTe

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