Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure

doi:10.1088/1674-1056/ab470f

Abstract Hysteresis current-voltage (I-V) characteristics are often observed in a highly non-ideal (n>2) as-deposited nickel (Ni)/4H-SiC Schottky contact. However, we find that this kind of hysteresis effect also exists in an as-deposited Ni/n-type 4H-SiC Schottky structure even if the ideality factor (n) is less than 1.2. The hysteresis I-V characteristics is studied in detail in this paper by using the various measurements including the hysteresis I-V, sequential I-V sweeping, cycle I-V, constant reverse voltage stress (CRVS). The results show that the hysteresis I-V characteristics are strongly dependent on the sweeping voltage and post-deposition annealing (PDA). The high temperature PDA (800℃) can completely eliminate this hysteresis. Meanwhile, the magnitude of the hysteresis effect is shown to decrease in the sequential I-V sweeping measurement, which is attributed to the fact that the electrons tunnel from the 4H-SiC to the localized states at the Ni/n-type 4H-SiC interface. It is found that the application of the reverse bias stress has little effect on the emission of those trapped electrons. And a fraction of the trapped electrons will be gradually released with the time under the condition of air and with no bias. The possible physical charging mechanism of the interface traps is discussed on the basis of the experimental findings.

Keywords: 4H-SiC Schottky hysteresis I-V Schottky barrier height

Received: 12 August 2019
Revised: 16 September 2019
Accepted manuscript online:

PACS:

73.40.Ns

(Metal-nonmetal contacts)

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61804118, 61774117, and 61774119), the Fundamental Research Funds for the Central Universities, China (Grant Nos. 20101185935 and 20106186647), the National Key Basic Research Program of China (Grant No. 2015CB759600), the Shaanxi Key Research and Development Program, China (Grant No. 2018ZDXM-GY-008), and the Natural Science Basic Research Plan in Shaanxi Province, China (Grant No. 2017JM6003).

Corresponding Authors: Qing-Wen Song
E-mail: qwsong@xidian.edu.cn

Cite this article:

Hao Yuan(袁昊), Qing-Wen Song(宋庆文), Chao Han(韩超), Xiao-Yan Tang(汤晓燕), Xiao-Ning He(何晓宁), Yu-Ming Zhang(张玉明), Yi-Men Zhang(张义门) Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure 2019 Chin. Phys. B 28 117303

[1]	Kimoto T 2015 Jpn. J. Appl. Phys. 54 040103
[2]	Bhatnagar M and Baliga B J 1993 IEEE Trans. Electron. Dev. 40 645
[3]	Alexandrov P, Wright W, Pan M, Weiner M, Jiao L and Zhao J H 2003 Solid-State Electron. 47 263
[4]	Zhu L, Chow T P, Jones K A and Agarwal A 2006 IEEE Trans. Electron. Dev. 53 363
[5]	Draghici M, Rupp R, Gerlach R and Zippelius B 2015 Mater. Sci. Forum 821-823 608
[6]	Wahab Q, Kimoto T, Ellison A, Hallin C, Tuominen M, Yakimova R, Henry A, Bergman J P and Janzén E A 1998 Appl. Phys. Lett. 72 445
[7]	Nakamura T, Miyanagi T, Kamata I, Jikimoto T and Tsuchida H 2005 IEEE Electron Dev. Lett. 26 99
[8]	Perrone D, Naretto M, Ferrero S, Scaltrito L and Pirri C F 2009 Mater. Sci. Forum 615-617 647
[9]	Boussouar L, Ouennoughi Z, Rouag N, Sellai A, Weiss R and Ryssel H 2011 Microelectron. Eng. 88 969
[10]	Tumakha S, Ewing D J, Porter L M, Wahab Q, Ma X, Sudharshan T S and Brillson L 2005 J. Appl. Phys. Lett. 87 242106
[11]	Calcagno L, Ruggiero A, Roccaforte F and La V F 2005 J. Appl. Phys. 98 023713
[12]	Tuokedaerhan K, Tan R, Kakushima K, Ahmet, P, Kataoka Y, Nishiyama A, Sugii N, Wakabayashi H, Tsutsui K, Natori K, Hattori T and Iwai H 2013 Appl. Phys. Lett. 103 111908
[13]	Omar S U, Sudarshan T S, Rana T A and Song H 2014 J. Phys. D:Appl. Phys. 47 295102
[14]	Pérez R, Mestres N, Montserrat J, Tournier D and Godignon P 2005 Phys. Status Solidi A 202 692
[15]	Ewing D J, Wahab Q, Ciechonski R R, Syväjärvi M, Yakimova R and Porter L M 2007 Semicond. Sci. Technol. 22 1287
[16]	Omar S U, Sudarshan T S, Rana T A and Song H 2015 IEEE Electron Dev. Lett. 62 615
[17]	Kurimoto E, Harima H, Toda T, Sawada M, Iwami M and Nakashima S 2002 J. Appl. Phys. 91 10215
[18]	Roccaforte F, La V F, Raineri V, Musumeci P, Calcagno L and Condorelli G G 2003 Appl. Phys. A 77 827

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Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure

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