Chin. Phys. B
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Chin. Phys. B  2017, Vol. 26 Issue (8): 088801    DOI: 10.1088/1674-1056/26/8/088801
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Degradation behavior of electrical properties of GaInAs (1.0 eV) and GaInAs (0.7 eV) sub-cells of IMM4J solar cells under 1-MeV electron irradiation
Yan-Qing Zhang(张延清)1, Ming-Xue Huo(霍明学)2, Yi-Yong Wu(吴宜勇)1,2, Cheng-Yue Sun(孙承月)2, Hui-Jie Zhao(赵慧杰)1, Hong-Bin Geng(耿洪滨)1, Shuai Wang(王帅)3, Ru-Bin Liu(刘如彬)3, Qiang Sun(孙强)3
1 School of Materials Science & Engineering, Harbin Institute of Technology, Harbin 150001, China;
2 Research Center of Basic Space Science, Harbin Institute of Technology, Harbin 150001, China;
3 The 18th Research Institute of China Electronics Technology Group Corporation, Tianjin 300381, China

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