Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2017, Vol. 26 Issue (8): 087701    DOI: 10.1088/1674-1056/26/8/087701
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Improvement of the high-κ/Ge interface thermal stability using an in-situ ozone treatment characterized by conductive atomic force microscopy
Ji-Bin Fan(樊继斌)1, Xiao-Jiao Cheng(程晓姣)1, Hong-Xia Liu(刘红侠)2, Shu-Long Wang(王树龙)2, Li Duan(段理)1
1 School of Materials Science and Engineering, Chang'an University, Xi'an 710061, China;
2 School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn