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| Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer |
| Wei Li(李维)1, Peng Jin(金鹏)2, Wei-Ying Wang(王维颖)2, De-Feng Mao(毛德丰)2, Xu Pan(潘旭)2, Xiao-Liang Wang(王晓亮)2, Zhan-Guo Wang(王占国)2 |
1 Science and Technology on Metrology and Calibration Laboratory, Changcheng Institute of Metrology & Measurement, Aviation Industry Corporation of China, Beijing 100095, China;
2 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100095, China |
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Abstract AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence (PL) and time-resolved photoluminescence (TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers' localization and delocalization in the AlGaN alloy.
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Received: 03 January 2017
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| Fund: Project supported by the National Key Research and Development Program of China (Grant No.2016YFB0400101) and Beijing Science and Technology Project,China (Grant No.Z151100003315024). |
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Corresponding Authors: Peng Jin
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E-mail: pengjin@semi.ac.cn
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2017, Vol. 26 
