High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

doi:10.1088/1674-1056/25/11/118506

Abstract In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n⁺-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H₂O as an oxidizer at temperatures as low as 400℃ without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510^-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n⁺-InGaN contact layer. A forward voltage of 2.82 V@20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-Ⅲ), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O₂ as an oxidizer (LED-Ⅱ), respectively. The results indicate that the AZO-TCL grown by MOCVD using H₂O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application.

Keywords: transparent conductive layers Al-doped ZnO light-emitting diodes MOCVD

Received: 19 April 2016
Revised: 12 August 2016
Accepted manuscript online:

PACS:	85.60.Jb	(Light-emitting devices)
	77.55.hf	(ZnO)
	81.15.Gh	(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

Fund: Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

Corresponding Authors: Yan-Li Pei, Gang Wang
E-mail: peiyanli@mail.sysu.edu.cn;stswangg@mail.sysu.edu.cn

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Jia-Yong Lin(林家勇), Yan-Li Pei(裴艳丽), Yi Zhuo(卓毅), Zi-Min Chen(陈梓敏), Rui-Qin Hu(胡锐钦), Guang-Shuo Cai(蔡广烁), Gang Wang(王钢) High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H₂O as an oxidizer 2016 Chin. Phys. B 25 118506

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High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

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High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H₂O as an oxidizer