Chin. Phys. B
Citation Search Quick Search
Chin. Phys. B  2016, Vol. 25 Issue (11): 118506    DOI: 10.1088/1674-1056/25/11/118506
INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY Current Issue| Next Issue| Archive| Adv Search |
High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer
Jia-Yong Lin(林家勇)1, Yan-Li Pei(裴艳丽)1, Yi Zhuo(卓毅)1, Zi-Min Chen(陈梓敏)2, Rui-Qin Hu(胡锐钦)1, Guang-Shuo Cai(蔡广烁)1, Gang Wang(王钢)1
1 State Key Lab of Optoelectronics Materials & Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China;
2 School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China

Copyright © the Chinese Physical Society
Address: Institute of Physics, Chinese Academy of Sciences, P. O. Box 603,Beijing 100190 China(100190)
Tel: 010-82649026   Fax: 010-82649027   E-Mail: cpb@aphy.iphy.ac.cn
Supported by Beijing Magtech Co. Ltd. Tel: 86-010-62662699 E-mail: support@magtech.com.cn