Chin. Phys. B
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Chin. Phys. B  2016, Vol. 25 Issue (2): 027305    DOI: 10.1088/1674-1056/25/2/027305
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Current Issue| Next Issue| Archive| Adv Search |
Modeling of a triple reduced surface field silicon-on-insulator lateral double-diffused metal-oxide-semiconductor field-effect transistor with low on-state resistance
Yu-Ru Wang(王裕如)1, Yi-He Liu(刘祎鹤)1, Zhao-Jiang Lin(林兆江)1, Dong Fang(方冬)1, Cheng-Zhou Li(李成州)1, Ming Qiao(乔明)1,2, Bo Zhang(张波)1
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
2. Institute of Electronic and Information Engineering in Dongguan, UESTC, Dongguan 523808, China

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