Silicon-on-nothing MOSFETs fabricated with hydrogenand helium co-implantation
Bu Wei-Hai(卜伟海)a), Huang Ru(黄如)a)†, Li Ming(黎明)a), Tian Yu(田豫)a), Wu Da-Ke(吴大可)a), Chan Man-Sun(陈文新)b), and Wang Yang-Yuan(王阳元)a)
a Institute of Microelectronics, Peking University,Beijing 100871, China; b Department of Electrical & Electronic Engineering,Hong Kong University of Science & Technology, Hong Kong, China
Abstract In this paper, a method to fabricate Silicon-on-Nothing (SON) MOSFETs using H$^{ + }$ and He$^{ + }$ co-implantation is presented. The technique is compatible with conventional CMOS technology and its feasibility has been experimentally demonstrated. SON MOSFETs with 50nm gate length have been fabricated. Compared with the corresponding bulk MOSFETs, the SON MOSFETs show higher on current, reduced leakage current and lower subthreshold slope.
Received: 06 April 2006
Revised: 26 June 2006
Accepted manuscript online:
(Impurity doping, diffusion and ion implantation technology)
Fund: Project supported by
National Natural Science Foundation of China
(Grant No~90207004) and State Key Fundamental Research Project of China.
Cite this article:
Bu Wei-Hai(卜伟海), Huang Ru(黄如), Li Ming(黎明), Tian Yu(田豫), Wu Da-Ke(吴大可), Chan Man-Sun(陈文新), and Wang Yang-Yuan(王阳元) Silicon-on-nothing MOSFETs fabricated with hydrogenand helium co-implantation 2006 Chinese Physics 15 2751
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