Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

doi:10.1088/1674-1056/22/11/116804

Abstract Tensile strain, crystal quality, and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 ℃ for a short period (< 20 s). The films were grown on Si(001) substrates by ultra-high vacuum chemical vapor deposition. These improvements are attributed to relaxation and defect annihilation in the Ge films. However, after prolonged (>20 s) rapid thermal annealing, tensile strain and crystal quality degenerated. This phenomenon results from intensive Si–Ge mixing at high temperature.

Keywords: Ge film rapid thermal annealing tensile strain Si–Ge mixing

Received: 18 April 2013
Revised: 14 June 2013
Accepted manuscript online:

PACS:	68.55.ag	(Semiconductors)
	65.40.De	(Thermal expansion; thermomechanical effects)
	68.37.Ps	(Atomic force microscopy (AFM))

Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CB632103) and the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, and 61177038).

Corresponding Authors: Cheng Bu-Wen
E-mail: cbw@semi.ac.cn

Cite this article:

Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Ya-Ming (李亚明), Li Chuan-Bo (李传波), Xue Chun-Lai (薛春来), Wang Qi-Ming (王启明) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate 2013 Chin. Phys. B 22 116804

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Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate

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