Abstract Tensile strain, crystal quality, and surface morphology of 500 nm thick Ge films were improved after rapid thermal annealing at 900 ℃ for a short period (< 20 s). The films were grown on Si(001) substrates by ultra-high vacuum chemical vapor deposition. These improvements are attributed to relaxation and defect annihilation in the Ge films. However, after prolonged (>20 s) rapid thermal annealing, tensile strain and crystal quality degenerated. This phenomenon results from intensive Si–Ge mixing at high temperature.
Fund: Project supported by the National Basic Research Program of China (Grant No. 2013CB632103) and the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, and 61177038).
Liu Zhi (刘智), Cheng Bu-Wen (成步文), Li Ya-Ming (李亚明), Li Chuan-Bo (李传波), Xue Chun-Lai (薛春来), Wang Qi-Ming (王启明) Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate 2013 Chin. Phys. B 22 116804
[1]
Chui C O, Ramanathan S, Triplett B B, McIntyre P C and Saraswat K C 2002 IEEE Electron Device Lett. 23 473
[2]
Miyao M, Murakami E, Etoh H, Nakagawa K and Nishida A 1991 J. Cryst. Growth 111 912
[3]
Hu W X, Cheng B W, Xue C L, Zhang G Z, Su S J, Zuo Y H and Wang Q M 2012 Chin. Phys. B 21 017805
[4]
Li Y M, Hu W X, Cheng B W, Liu Z and Wang Q M 2012 Chin. Phys. Lett. 29 034205
[5]
Moriyama Y, Kamimuta Y, Ikeda K and Tezuka T 2012 Thin Solid Films 520 3236
[6]
Liu J F, Cannon D D, Wada K, Ishikawa Y, Jongthammanurak S, Danielson D T, Michel J and Kimerling L C 2005 Appl. Phys. Lett. 87 011110
[7]
Chen Y H, Li C, Zhou Z W, Lai H K, Chen S Y, Ding W C, Cheng B W and Yu Y D 2009 Appl. Phys. Lett. 94 141902
[8]
Huo Y, Lin H, Chen R, Makarova M, Rong Y, Li M, Kamins T I, Vuckovic J and Harris J S 2011 Appl. Phys. Lett. 98 011111
[9]
Lim P H, Park S, Ishikawa Y and Wada K 2009 Opt. Express 17 16358
[10]
Luan H C, Lim D R, Lee K K, Chen K M, Sandland J G, Wada K and Kimerling L C 1999 Appl. Phys. Lett. 75 2909
[11]
Hu W X, Cheng B W, Xue C L, Xue H Y, Su S J, Bai A Q, Luo L P, Yu Y D and Wang Q M 2009 Appl. Phys. Lett. 95 092102
[12]
Liu J, Cannon D D, Wada K, Ishikawa Y, Danielson D T, Jongthammanurak S, Michel J and Kimerling L C 2004 Phys. Rev. B 70 155309
[13]
Capellini G, De Seta M, Zaumseil P, Kozlowski G and Schroeder T 2012 J. Appl. Phys. 111 073518
[14]
Hasanuzzaman M, Haddara Y M and Knights A P 2009 J. Appl. Phys. 105 043504
[15]
Tsang J C, Mooney P M, Dacol F and Chu J O 1994 J. Appl. Phys. 75 8098
[16]
Nayfeh A, Chui C O, Saraswat K C and Yonehara T 2004 Appl. Phys. Lett. 85 2815
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