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Chin. Phys. B, 2008, Vol. 17(9): 3479-3483    DOI: 10.1088/1674-1056/17/9/056
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES Prev   Next  

Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells

Lin Gui-Jiang(林桂江)a)†, Lai Hong-Kai(赖虹凯)a), Li Cheng(李成)a), Chen Song-Yan(陈松岩)a), and Yu Jin-Zhong(余金中)a)b)
a Department of Physics, Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China; b State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract  The hole subband structures and effective masses of tensile strained Si/Si$_{1 - y }$Ge$_{y}$ quantum wells are calculated by using the 6$\times $6 k $\cdot$ p method. The results show that when the tensile strain is induced in the quantum well, the light-hole state becomes the ground state, and the light hole effective masses in the growth direction are strongly reduced while the in-plane effective masses are considerable. Quantitative calculation of the valence intersubband transition between two light hole states in a 7nm tensile strained Si/Si$_{0.55}$Ge$_{0.45}$ quantum well grown on a relaxed Si$_{0.5}$Ge$_{0.5}$ (100) substrates shows a large absorption coefficient of 8400 cm$^{ - 1}$.
Keywords:  Si/SiGe      tensile strain      effective mass      valence intersubband transition  
Received:  15 December 2007      Revised:  29 December 2007      Accepted manuscript online: 
PACS:  73.21.Fg (Quantum wells)  
  62.20.F- (Deformation and plasticity)  
  62.25.-g (Mechanical properties of nanoscale systems)  
  71.15.-m (Methods of electronic structure calculations)  
  71.18.+y (Fermi surface: calculations and measurements; effective mass, g factor)  
  81.40.Lm (Deformation, plasticity, and creep)  
Fund: Project supported by National Natural Science Foundation of China (Grant Nos 50672079, 60336010 and 60676027) and National Basic Research Program of China (Grant No 2007CB613400).

Cite this article: 

Lin Gui-Jiang(林桂江), Lai Hong-Kai(赖虹凯), Li Cheng(李成), Chen Song-Yan(陈松岩), and Yu Jin-Zhong(余金中) Study of valence intersubband absorption in tensile strained Si/SiGe quantum wells 2008 Chin. Phys. B 17 3479

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