Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

doi:10.1088/1674-1056/22/2/028502

Abstract In the present paper we conduct a theoretical study of the thermal accumulation effect of a typical bipolar transistor caused by high power pulsed microwave (HPM), and investigate the thermal accumulation effect as a function of pulse repetition frequency (PRF) and duty cycle. A study of the damage mechanism of the device is carried out from the variation analysis of the distribution of the electric field and the current density. The result shows that the accumulation temperature increases with PRF increasing and the threshold for the transistor is about 2 kHz. The response of the peak temperature induced by the injected single pulses indicates that the falling time is much longer than the rising time. Adopting the fitting method, the relationship between the peak temperature and the time during the rising edge and that between the peak temperature and the time during the falling edge are obtained. Moreover, the accumulation temperature decreases with duty cycle increasing for a certain mean power.

Keywords: bipolar transistor high power microwave pulse repetition frequency duty cycle

Received: 06 May 2012
Revised: 10 July 2012
Accepted manuscript online:

PACS:	85.30.Pq	(Bipolar transistors)
	84.40.-x	(Radiowave and microwave (including millimeter wave) technology)

Fund: Project supported by the National Natural Science Foundation of China (Grant No. 60776034).

Corresponding Authors: Ma Zhen-Yang
E-mail: zyma@mail.xidian.edu.cn

Cite this article:

Ma Zhen-Yang (马振洋), Chai Chang-Chun (柴常春), Ren Xing-Rong (任兴荣), Yang Yin-Tang (杨银堂), Zhao Ying-Bo (赵颖博), Qiao Li-Ping (乔丽萍 ) Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters 2013 Chin. Phys. B 22 028502

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Pulsed microwave damage trend of bipolar transistor as a function of pulse parameters

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